The 100 most-cited articles in Applied Physics Letters, 2018

Cu2O is one of the attractive photovoltaic materials for solar cells because of its low cost, nontoxicity, and good mobility. In this paper, an obvious enhancement of power conversion efficiency (PCE) for ZnO/Cu2O solar cells with perfectly oriented and micrometer grain sized Cu2O films was experimentally demonstrated. Cu2O was fabricated using radical oxidation of Cu foils at a low temperature of 500 °C. When followed by a rapid quenching and post annealing treatment, the perfectly oriented and micrometer sized Cu2O crystals (3∼4 μm) could be obtained. The crystal structure and optical properties of Cu2O were investigated in detail. Compared to conventional solar cells without any treatment, the PCE of the solar cells based on Cu2O with treatment was 3.18%, corresponding to a significant PCE improvement of 60.6%.

In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the β-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping. Shubnikov-de Haas (SdH) oscillations were observed in the modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality electron channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by the weak temperature dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm2/Vs, which is significantly higher than that achieved in bulk-doped Beta-phase Gallium Oxide (β-Ga2O3). The observed SdH oscillations allowed for the extraction of the electron effective mass in the (010) plane to be 0.313 ± 0.015 m0 and the quantum scattering time to be 0.33 ps at 3.5 K. The demonstrated modulation-doped β-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena and semiconductor device technologies based on the β-Ga2O3 material system.

We investigate the various cation substitutional dopants in Ga2O3 for the possibility of p–type conductivity using density functional theory. Our calculations include both standard density functional theory and hybrid functional calculations. We demonstrate that all the investigated dopants result in deep acceptor levels, not able to contribute to the p–type conductivity of Ga2O3. In light of these results, we compare our findings with other wide bandgap oxides and reexamine previous experiments on zinc doping in Ga2O3.

Ga2O3 is emerging as an important electronic material. Alloying with Al2O3 is a viable method to achieve carrier confinement, to increase the bandgap, or to modify the lattice parameters. However, the two materials have very different ground-state crystal structures (monoclinic β-gallia for Ga2O3 and corundum for Al2O3). Here, we use hybrid density functional theory calculations to assess the alloy stabilities and electronic properties of the alloys. We find that the monoclinic phase is the preferred structure for up to 71% Al incorporation, in close agreement with experimental phase diagrams, and that the ordered monoclinic AlGaO3 alloy is exceptionally stable. We also discuss bandgap bowing, lattice constants, and band offsets that can guide future synthesis and device design efforts.

True on-demand high-repetition-rate single-photon sources are highly sought after for quantum information processing applications. However, any coherently driven two-level quantum system suffers from a finite re-excitation probability under pulsed excitation, causing undesirable multi-photon emission. Here, we present a solid-state source of on-demand single photons yielding a raw second-order coherence of g(2)(0)=(7.5±1.6)×10−5 without any background subtraction or data processing. To this date, this is the lowest value of g(2)(0) reported for any single-photon source even compared to the previously reported best background subtracted values. We achieve this result on GaAs/AlGaAs quantum dots embedded in a low-Q planar cavity by employing (i) a two-photon excitation process and (ii) a filtering and detection setup featuring two superconducting single-photon detectors with ultralow dark-count rates of (0.0056±0.0007) s−1 and (0.017±0.001) s−1, respectively. Re-excitation processes are dramatically suppressed by (i), while (ii) removes false coincidences resulting in a negligibly low…

We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in β-Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples grown by a variety of methods, including edge-defined film-fed, Czochralski, molecular beam epitaxy, and low pressure chemical vapor deposition. Through simultaneous, self-consistent fitting of the temperature dependent carrier density and mobility, we are able to accurately estimate the donor energy of Si and Ge to be 30 meV in β-Ga2O3. Additionally, we show that our measured Hall effect data are consistent with Si and Ge acting as typical shallow donors, rather than shallow DX centers. The high temperature Hall effect measurement of Fe doped β-Ga2O3 indicates that the material remains weakly n-type even with the Fe doping, with an acceptor energy of 860 meV relative to the conduction band for the Fe deep acceptor. Van der Pauw measurements of Mg doped Ga2O3 indicate an activation energy of 1.1 eV, as determined from the temperature dependent conductivity.

Using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga2O3. First, our results indicate that FeGa, and not an intrinsic defect, acts as the deep acceptor responsible for the often dominating E2 level at ∼0.78 eV below the conduction band minimum. Second, by provoking additional intrinsic defect generation via proton irradiation, we identified the emergence of a new level, labeled as E2*, having the ionization energy very close to that of E2, but exhibiting an order of magnitude larger capture cross section. Importantly, the properties of E2* are found to be consistent with its intrinsic origin. As such, contradictory opinions of a long standing literature debate on either extrinsic or intrinsic origin of the deep acceptor in question converge accounting for possible contributions from E2 and E2* in…

Rydberg atoms, with one highly excited, nearly ionized electron, have extreme sensitivity to electric fields, including microwave fields ranging from 100 MHz to over 1 THz. Here, we show that room-temperature Rydberg atoms can be used as sensitive, high bandwidth, microwave communication antennas. We demonstrate near photon-shot-noise limited readout of data encoded in amplitude-modulated 17 GHz microwaves, using an electromagnetically induced-transparency (EIT) probing scheme. We measure a photon-shot-noise limited channel capacity of up to 8.2 Mbit s−1 and implement an 8-state phase-shift-keying digital communication protocol. The bandwidth of the EIT probing scheme is found to be limited by the available coupling laser power and the natural linewidth of the rubidium D2 transition. We discuss how atomic communication receivers offer several opportunities to surpass the capabilities of classical antennas.

In this work, we analytically and experimentally present perfect acoustic absorbers via spiral metasurfaces composed of coiled channels and embedded apertures. Perfect absorption (reaching 0.999 in experiments) is realized with an ultra-thin thickness down to ∼1/100th of the operating wavelength. Owing to the superior impedance manipulation provided by the embedded apertures, perfect absorption with tunable frequencies is demonstrated. Our results would contribute to paving a way towards designing thin and light absorbers for the low frequency absorption challenge.

The ferroelectric properties of ultrathin Y-doped HfO2 films were investigated. Ferroelectricity was demonstrated experimentally in 3 nm-thick Y-doped HfO2 via direct detection of displacement currents during polarization switching. The dependence on the HfO2 thickness within the 30 to 3 nm range revealed that the ferroelectric properties decrease rapidly below a critical thickness. In the ultrathin HfO2 region, methods such as higher Y doping or metal capping annealing were required to further stabilize the ferroelectric phase. These methods could be used to enhance the switchable polarization (Psw) to 35 μC/cm2 in 5 nm- and 10 μC/cm2 in 3 nm-thick Y-doped HfO2. This paper indicates that HfO2 ferroelectricity is scalable even in the ultrathin region.

Deep acceptor doping of β-Ga2O3 with Mg and N was demonstrated by implantation of the impurity ions into n-type bulk substrates. Systematic physical and electrical characterizations were performed to demonstrate recovery of the implantation-damaged crystals and electrical activation of the dopant atoms by thermal annealing at 1000–1200 °C in an N2 atmosphere. N was found to exhibit much lower thermal diffusivity than Mg, thus enabling the use of higher annealing temperatures to maximize N activation efficiency without significantly altering the impurity profile. Consequently, an n-Ga2O3/Ga2O3:N/n-Ga2O3 structure was capable of sustaining a much larger voltage across its end terminals than its Mg-doped counterpart. The development of an ion implantation technology for acceptor doping of β-Ga2O3 creates unique opportunities for designing and engineering a variety of high-voltage β-Ga2O3 devices.

The performance characteristics of AlGaN-based deep ultraviolet light emitting diodes (UV-LEDs) grown by metalorganic vapor phase epitaxy on sputtered and high temperature annealed AlN/sapphire templates are investigated and compared with LEDs grown on epitaxially laterally overgrown (ELO) AlN/sapphire. The structural and electro-optical properties of the devices on 350 nm sputtered and high temperature annealed AlN/sapphire show similar defect densities and output power levels as LEDs grown on low defect density ELO AlN/sapphire templates. After high temperature annealing of the 350 nm sputtered AlN, the full widths at half maximum of the (0002) and (101¯2) reflections of the high resolution x-ray diffraction rocking curves decrease by one order of magnitude to 65 arc sec and 240 arc sec, respectively. The curvature of the sputtered and HTA AlN/sapphire templates after regrowth with 400 nm MOVPE AlN is with −80 km−1 much lower than the curvature of the ELO AlN/sapphire template of −160 km−1. The on-wafer measured output powers of 268 nm LEDs grown on 350 nm sputtered and high…

In this work, we construct an ultrathin graphene/GaS heterostructure and investigate its electronic properties as well as the effect of vertical strain using density functional theory. The calculated results of the equilibrium interlayer spacing (3.356 Å) and the binding energy show that the intrinsic properties of isolated graphene and GaS monolayers can be preserved and the weak van der Waals interactions are dominated in the heterostructures. The van der Waals heterostructure (vdWH) forms an n-type Schottky contact with a small Schottky barrier height of 0.51 eV. This small Schottky barrier height can also be tuned by applying vertical strain. Furthermore, we find that the n-type Schottky contact of the vdWH can be changed to p-type when the interlayer spacing is decreased and exceeded to 2.60 Å. These findings show the great potential application of the graphene/GaS vdWH for designing next generation devices.

There is an abundance of low-frequency and irregular human motion energy that can be harvested. In this work, a non-resonant rotational electromagnetic energy harvester (REH) for scavenging low-frequency (<10 Hz) and irregular human motion is presented. The energy harvester simply introduces a cylindrical stator and a disk-shaped rotor forming a movement of a higher pair. Without any complicated transmission mechanism, the rotor can easily rotate around the stator by magnetic attractive force. Driven by a broadband frequency vibration, the magnetic rotor is coupled with surrounding wound coils to operate electromagnetic energy harvesting. Theoretical and experimental investigations of the REH are studied, and numerical simulations show good agreement with the experimental results. The treadmill tests at various motion speeds are performed to demonstrate the advantage of the REH in harvesting energy from irregular human motion. At a driving frequency of 8 Hz, the electromagnetic coils can provide the maximum power of 10.4 mW at a load resistance of 100 Ω. The REH exhibits outstanding…

Zintl compound n-type Mg3(Sb,Bi)2 was recently found to exhibit excellent thermoelectric figure of merit zT (∼1.5 at around 700 K). To improve the thermoelectric performance in the whole temperature range of operation from room temperature to 720 K, we investigated how the grain size of sintered samples influences electronic and thermal transport. By increasing the average grain size from 1.0 μm to 7.8 μm, the Hall mobility below 500 K was significantly improved, possibly due to suppression of grain boundary scattering. We also confirmed that the thermal conductivity did not change by increasing the grain size. Consequently, the sample with larger grains exhibited enhanced average zT. The calculated efficiency of thermoelectric power generation reaches 14.5% (ΔT = 420 K), which is quite high for a polycrystalline pristine material.

Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that 1c pure screw dislocations are related to the reverse leakage in vertical p-n diodes.

β-Ga2O3 has attracted considerable interest in recent years for high power electronics, where the thermal properties of β-Ga2O3 play a critical role. The thermal conductivity of β-Ga2O3 is expected to be three-dimensionally (3D) anisotropic due to the monoclinic lattice structure. In this work, the 3D anisotropic thermal conductivity tensor of a (010)-oriented β-Ga2O3 single crystal was measured using a recently developed elliptical-beam time-domain thermoreflectance method. Thermal conductivity along any direction in the (010) plane as well as the one perpendicular to the (010) plane can be directly measured, from which the 3D directional distribution of the thermal conductivity can be derived. Our measured results suggest that at room temperature, the highest in-plane thermal conductivity is along a direction between [001] and [102], with a value of 13.3 ± 1.8 W m−1 K−1, and the lowest in-plane thermal conductivity is close to the [100] direction, with a value of 9.5 ± 1.8 W m−1 K−1. The through-plane thermal conductivity, which is along the [010] direction, has the highest value…

Low-dimensional multiferroicity, though highly scarce in nature, has attracted great attention due to both fundamental and technological interests. Using first-principles density functional theory, we show that ferromagnetism and ferroelectricity can coexist in monolayer transition metal phosphorus chalcogenides (TMPCs)-CuMP2X6 (M = Cr, V; X = S, Se). These van der Waals layered materials represent a class of 2D multiferroic semiconductors that simultaneously possess ferroelectric and ferromagnetic orders. In these monolayer materials, Cu atoms spontaneously move away from the center atomic plane, giving rise to nontrivial electric dipole moment along the plane normal. In addition, their ferromagnetism originates from indirect exchange interaction between Cr/V atoms, and their out-of-plane ferroelectricity suggests the possibility of controlling electric polarization by external vertical electric field. Monolayer semiconducting TMPCs thus provide a solid-state 2D materials platform for realizing 2D nanoscale switches and memory devices patterned with top and bottom electrodes.

We report on the effect of the Hf0.5Zr0.5O2 (HZO) film thickness on the ferroelectric and dielectric properties using pulse write/read measurements. HZO films of thicknesses ranging from 5 to 20 nm were annealed at 400 °C for 1 min in a nitrogen ambient to be compatible with the back-end of the line thermal budget. As the HZO film thickness decreases, low-voltage operation (1.0 V or less) can be achieved without the dead layer effect, although switching polarization (Psw) tends to decrease due to the smaller grain size. Meanwhile, for 20-nm-thick HZO films prepared under the identical stress (similar TiN top electrode thickness and thermal budget), the Psw and dielectric constant are reduced because of additional monoclinic phase formation.

β-Ga2O3 vertical trench Schottky barrier diodes (SBDs) are realized, demonstrating superior reverse blocking characteristics than the co-fabricated regular SBDs. Taking advantage of the reduced surface field effect offered by the trench metal-insulator-semiconductor structure, the reverse leakage current in the trench SBDs is significantly suppressed. The devices have a higher breakdown voltage of 1232 V without optimized field management techniques, while having a specific on-resistance (Ron,sp) of 15 mΩ cm2. An ultra-low leakage current density of <1 μA/cm2 is achieved before breakdown, the lowest among all reported Ga2O3 Schottky barrier diodes. Fast electron trapping and slow de-trapping near the Al2O3/Ga2O3 interface are observed by repeated C-V measurements, which show an interface state ledge and positive shifts of flat-band voltages with increasing voltage stress. By comparison between pulsed and DC measurements, the device self-heating effect and the trapping effect are uncoupled. It is found that the trapping effect at the trench sidewall affects the on-resistance of the…

In this work, we demonstrate modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. The maximum sheet carrier density for a two-dimensional electron gas (2DEG) in a β-(AlxGa1-x)2O3/Ga2O3 heterostructure is limited by the conduction band offset and parasitic channel formation in the barrier layer. We demonstrate a double heterostructure to realize a β-(AlxGa1-x)2O3/Ga2O3/(AlxGa1-x)2O3 quantum well, where electrons can be transferred from below and above the β-Ga2O3 quantum well. The confined 2DEG charge density of 3.85 × 1012 cm−2 was estimated from the low-temperature Hall measurement, which is higher than that achievable in a single heterostructure. Hall mobilities of 1775 cm2/V·s at 40 K and 123 cm2/V·s at room temperature were measured. Modulation-doped double heterostructure field effect transistors showed a maximum drain current of IDS = 257 mA/mm, a peak transconductance (gm) of 39 mS/mm, and a pinch-off voltage of −7.0 V at room temperature. The three-terminal off-state breakdown measurement on the device with a gate-drain spacing (LGD) of…

A high current density of 1 kA/cm2 is experimentally realized in enhancement-mode Ga2O3 vertical power metal-insulator field-effect transistors with fin-shaped channels. Comparative analysis shows that the more than doubled current density over the prior art arises from a larger transistor channel width; on the other hand, a wider channel also leads to a more severe drain-induced barrier lowering therefore premature transistor breakdown at zero gate-source bias. The observation of a higher current density in a wider channel confirms that charge trapping in the gate dielectric limits the effective field-effect mobility in these transistor channels, which is about 2× smaller than the electron mobility in the Ga2O3 drift layer. The tradeoff between output-current density and breakdown voltage also depends on the trap density. With minimal trap states, the output current density should remain high while breakdown voltage increases with decreasing fin-channel width.

Improving the performance of superconducting qubits and resonators generally results from a combination of materials and fabrication process improvements and design modifications that reduce device sensitivity to residual losses. One instance of this approach is to use trenching into the device substrate in combination with superconductors and dielectrics with low intrinsic losses to improve quality factors and coherence times. Here, we demonstrate titanium nitride coplanar waveguide resonators with mean quality factors exceeding two million and controlled trenching reaching 2.2 μm in the silicon substrate. Additionally, we measure sets of resonators with a range of sizes and trench depths and compare these results with finite-element simulations to demonstrate quantitative agreement with a model of interface dielectric loss. We then apply this analysis to determine the extent to which trenching can improve resonator performance.

Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich AlGaN, is critical to realizing next-generation applications in high-power electronics and deep UV light sources. Silicon is not a hydrogenic donor in AlN as it is in GaN; despite this, the carrier concentration should be controllable, albeit less efficiently, by increasing the donor concentration during growth. At low doping levels, an increase in the Si content leads to a commensurate increase in free electrons. Problematically, this trend does not persist to higher doping levels. In fact, a further increase in the Si concentration leads to a decrease in free electron concentration; this is commonly referred to as the compensation knee. While the nature of this decrease has been attributed to a variety of compensating defects, the mechanism and identity of the predominant defects associated with the knee have not been conclusively determined. Density functional theory calculations using hybrid exchange-correlation functionals have identified VAl+nSiAl complexes as central to mechanistically…

We investigate the impact of threading dislocation density on the reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on Si. A reduction in the threading dislocation density from 2.8 × 108 cm−2 to 7.3 × 106 cm−2 has improved the laser lifetime by about five orders of magnitude when aged continuous-wave near room temperature (35 °C). We have achieved extrapolated lifetimes (time to double initial threshold) more than 10 × 106 h. An accelerated laser aging test at an elevated temperature (60 °C) reveals that p-modulation doped quantum dot lasers on Si retain superior reliability over unintentionally doped ones. These results suggest that epitaxially grown quantum dot lasers could be a viable approach to realize a reliable, scalable, and efficient light source on Si.

We analyze and compare different aspects of InAs/InAsSb and InAs/GaSb type-II superlattices for infrared detector applications and argue that the former is the most effective when implemented for mid-wavelength infrared detectors. We then report results on an InAs/InAsSb superlattice based mid-wavelength high operating temperature barrier infrared detector. At 150 K, the 50% cutoff wavelength is 5.37 μm, the quantum efficiency at 4.5 μm is ∼52% without anti-reflection coating, the dark current density under −0.2 V bias is 4.5 × 10−5 A/cm2, and the dark-current-limited and the f/2 black-body (300 K background in 3–5 μm band) specific detectivities are 4.6 × 1011 and 3.0 × 1011 cm-Hz1/2/W, respectively. A focal plane array made from the same material exhibits a mean noise equivalent differential temperature of 18.7 mK at 160 K operating temperature with an f/2 optics and a 300 K background, demonstrating significantly higher operating temperature than InSb.

Metagratings are flat and thin surfaces that rely on unique, periodically repeating (non-gradient), arbitrary shaped light scattering units for wave manipulation. However, the absence of an empirical relationship between the structural and diffraction properties of the units enforces utilization of brute force numerical optimization techniques to determine the unit shape for a desired application. Here, we present an artificial neural network based methodology to develop a fast-paced numerical relationship between the two. We demonstrate the training and the performance of a numerical function, utilizing simulated diffraction efficiencies of a large set of units, that can instantaneously mimic the optical response of any other arbitrary shaped unit of the same class. We validate the performance of the trained neural network on a previously unseen set of test samples and discuss the statistical significance. We then utilize the virtually instantaneous network operations to inverse design the metagrating unit shapes for a desired diffraction efficiency distribution. The proposed…

We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the effects of near-surface plasma processing and neutron irradiation on native point defects in β-Ga2O3. The near-surface sensitivity and depth resolution of these optical techniques enabled us to identify spectral changes associated with removing or creating these defects, leading to identification of one oxygen vacancy-related and two gallium vacancy-related energy levels in the β-Ga2O3 bandgap. The combined near-surface detection and processing of Ga2O3 suggests an avenue for identifying the physical nature and reducing the density of native point defects in this and other semiconductors.

Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350–380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm−2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.

We perform a first-principles study of lattice thermal transport in PbTe by explicitly considering anharmonicity up to 4th order. To determine the temperature-dependent lattice constant of PbTe beyond quasiharmonic approximation, we introduce a simple yet effective scheme to account for anharmonic phonon renormalization at finite temperature. Moreover, we explicitly compute mode-resolved phonon lifetimes by including both three- and four-phonon scatterings. We find that (1) anharmonic phonon renormalization leads to strong vibrational frequency shifts which improve the agreement between simulated and experimental lattice constants; (2) these frequency shifts lead to a significant increase in lattice thermal conductivity (κl) because of reduced phonon scattering phase space; and (3) four-phonon scatterings are responsible for severe reduction in κl on top of three-phonon scatterings, making κl consistent with experiments. Our results suggest that the predicted κl and its temperature dependence without considering thermal expansion, anharmonic phonon renormalization and four-phonon…

It has been shown that in the asymptotic case of infinite-key length, the 2-decoy state Quantum Key Distribution (QKD) protocol outperforms the 1-decoy state protocol. Here, we present a finite-key analysis of the 1-decoy method. Interestingly, we find that for practical block sizes of up to 108 bits, the 1-decoy protocol achieves for almost all experimental settings higher secret key rates than the 2-decoy protocol. Since using only one decoy is also easier to implement, we conclude that it is the best choice for QKD, in most common practical scenarios.

The Weyl antiferromagnet Mn3Sn has been recently attracting significant attention as it exhibits various useful functions such as a large anomalous Hall effect that is normally absent in antiferromagnets. Here, we report the thin film fabrication of the single phase of Mn3Sn and the observation of the large anomalous Hall effect at room temperature despite its vanishingly small magnetization. Our work on the high-quality thin film growth of the Weyl antiferromagnet paves the path for developing antiferromagnetic spintronics.

Nitrogen dioxide (NO2) plays a key role in environmental protection and human health. Recently, molybdenum disulfide (MoS2) representative of novel 2D materials has been utilized to detect NO2 gas, still hindered by the weak response, high operation temperature, as well as poor recovery characteristics. Herein, we report a UV light-assisted, room-temperature, recoverable, sensitive and selective NO2 gas sensing based on few-layer MoS2 nanosheet-Au nanoparticle composites serving as the sensing layer. In the dark condition, the as-prepared MoS2-Au sensor showed a response of 10% toward 2.5 ppm NO2 more than two times larger than MoS2 one, arising from more reaction sites (spillover effect and produced interfaces) and smaller baseline resistance after Au incorporation. Undesirably, all sensors exhibited an incomplete recovery. When MoS2-Au sensors were exposed to NO2 gas under UV illumination, better performance in terms of three-time enhanced response, full recovery and favorable repeatability was achieved in comparison with that in the dark case. Two aspects were responsible for…

In this work, we study the high critical breakdown field in β-Ga2O3 perpendicular to its (100) crystal plane using a β-Ga2O3/graphene vertical heterostructure. Measurements indicate a record breakdown field of 5.2 MV/cm perpendicular to the (100) plane that is significantly larger than the previously reported values on lateral β-Ga2O3 field-effect-transistors (FETs). This result is compared with the critical field typically measured within the (100) crystal plane, and the observed anisotropy is explained through a combined theoretical and experimental analysis.

We have combined spatially resolved steady-state micro-photoluminescence with time-resolved photoluminescence to investigate the exciton diffusion in a WSe2 monolayer encapsulated with hexagonal boron nitride. At 300 K, we extract an exciton diffusion length of LX = 0.36 ± 0.02 μm and an exciton diffusion coefficient of DX = 14.5 ± 2 cm2/s. This represents a nearly 10-fold increase in the effective mobility of excitons with respect to several previously reported values on nonencapsulated samples. At cryogenic temperatures, the high optical quality of these samples has allowed us to discriminate the diffusion of the different exciton species: bright and dark neutral excitons, as well as charged excitons. The longer lifetime of dark neutral excitons yields a larger diffusion length of LXD=1.5±0.02 μm.

This letter presents a monostable piezoelectric energy harvester (PEH) for achieving enhanced energy extraction from low-level excitations. The proposed PEH is realized by introducing symmetric magnetic attraction to a piezoelectric cantilever beam and a pair of stoppers to confine the maximum deflection of the beam. The lumped parameter model of such a system is presented and experimentally validated. Theoretical simulations and experimental measurements demonstrate that the proposed design can bring about a wider operating bandwidth and higher output voltage than the linear PEH. Under a sinusoidal vibration with an amplitude of 3 m/s2, a 54% increase in the operating bandwidth and a 253% increase in the magnitude of output power are achieved compared to its linear counterpart. Moreover, the proposed PEH exhibits rich dynamic features, including the tunable operating bandwidth, adjustable voltage and power levels, and softening hysteresis.

We predict the formation of a polarization-induced two-dimensional electron gas (2DEG) at the interface of ε-Ga2O3 and CaCO3, wherein the density of the 2DEG can be tuned by reversing the spontaneous polarization in ε-Ga2O3, for example, with an applied electric field. ε-Ga2O3 is a polar and metastable ultra-wide band-gap semiconductor. We use density-functional theory (DFT) calculations and coincidence-site lattice model to predict the region of epitaxial strain under which ε-Ga2O3 can be stabilized over its other competing polymorphs and suggest promising substrates. Using group-theoretical methods and DFT calculations, we show that ε-Ga2O3 is a ferroelectric material where the spontaneous polarization can be reversed through a non-polar phase by using an electric field. Based on the calculated band alignment of ε-Ga2O3 with various substrates, we show the formation of a 2DEG with a high sheet charge density of 1014 cm−2 at the interface with CaCO3 due to the spontaneous and piezoelectric polarization in ε-Ga2O3, which makes the system attractive for high-power and high-frequency…

The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high speed and low power Flash alternative. Here, we report more insight into FeFET performance by integrating two types of ferroelectric (FE) materials and varying their properties. By varying the material type [HfO2 (HSO) versus hafnium zirconium oxide (HZO)], optimum content (Si doping/mixture ratio), and film thickness, a material relation to FeFET device physics is concluded. As for the material type, an improved FeFET performance is observed for HZO integration with memory window (MW) comparable to theoretical values. For different Si contents, the HSO based FeFET exhibited a MW trend with different stabilized phases. Similarly, the HZO FeFET shows MW dependence on the Hf:Zr mixture ratio. A maximized MW is obtained with cycle ratios of 16:1 (HfO2:Si) and 1:1 (Hf:Zr) as measured on HSO and HZO based FeFETs, respectively. The thickness variation shows a trend of increasing MW with the increased FE layer…

In order to understand the influence of dislocations on doping and compensation in Al-rich AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on different templates on sapphire and low dislocation density single crystalline AlN. AlGaN grown on AlN exhibited the highest conductivity, carrier concentration, and mobility for any doping concentration due to low threading dislocation related compensation and reduced self-compensation. The onset of self-compensation, i.e., the “knee behavior” in conductivity, was found to depend only on the chemical potential of silicon, strongly indicating the cation vacancy complex with Si as the source of self-compensation. However, the magnitude of self-compensation was found to increase with an increase in dislocation density, and consequently, AlGaN grown on AlN substrates demonstrated higher conductivity over the entire doping range.

We demonstrate an all-optical thermometer based on an ensemble of silicon-vacancy centers (SiVs) in diamond by utilizing the sensitivity of the zero-phonon line wavelength to temperature, Δλ/ΔT=0.0124(2) nm K–1 [6.8(1) GHz K–1]. Using SiVs in bulk diamond, we achieve 70 mK precision at room temperature with a temperature uncertainty σT=360 mK/Hz. Finally, we use SiVs in 200 nm nanodiamonds as local temperature probes with 521 mK/Hz uncertainty and achieve sub-Kelvin precision. These properties deviate by less than 1% between nanodiamonds, enabling calibration-free thermometry for sensing and control of complex nanoscale systems.

The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co2MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co2MnGa strongly varies with temperature. We exploit the on-chip thermometry technique to quantify the thermal gradient, which enables us to directly evaluate the anomalous Nernst coefficient. We compare these results to a reference CoFeB thin film. We show that the 50-nm-thick Co2MnGa films exhibit a large anomalous Nernst effect of −2 μV/K at 300 K, whereas the 10-nm-thick Co2MnGa film exhibits a significantly smaller anomalous Nernst coefficient despite having similar volume magnetizations. These findings suggest that the microscopic origin of the anomalous Nernst effect in Co2MnGa is complex and may contain contributions from skew-scattering, side-jump, or intrinsic Berry phase. In any case, the observed anomalous Nernst coefficient of −2 μV/K at 300 K is…

This paper presents the homoepitaxy of Si-doped β-Ga2O3 thin films on semi-insulating (010) and (001) Ga2O3 substrates via low pressure chemical vapor deposition with a growth rate of ≥1 μm/h. Both high resolution scanning transmission electron microscopy and X-ray diffraction measurements demonstrated high crystalline quality homoepitaxial growth of these thin films. Atomic resolution STEM images of the as-grown β-Ga2O3 thin films on (010) and (001) substrates show high quality material without extended defects or dislocations. The charge carrier transport properties of the as-grown Si-doped β-Ga2O3 thin films were characterized by the temperature dependent Hall measurement using van der Pauw patterns. The room temperature carrier concentrations achieved for the (010) and (001) homoepitaxial thin films were ∼1.2 × 1018 cm−3 and ∼9.5 × 1017 cm−3 with mobilities of ∼72 cm2/V s and ∼42 cm2/V s, respectively.

Spin-lattice coupling plays an important role in both formation and understanding of the magnetism in two-dimensional magnetic semiconductors (2DMS). In this paper, the steady pressure effects on the lattice structure, Raman resonances, and magnetization of a 2DMS Cr2Ge2Te6 have been studied by both experiments and first principles calculations. It is found that the bond length of Cr-Cr decreases, the angle of Cr-Te-Cr diverges from 90°, and the Raman modes Eg3 and Ag1 show an increase with the application of external pressure. Consequently, the magnetic phase transition temperature TC decreases from 66.6 K to 60.6 K (∼9%) as the pressure increases from 0 to 1 GPa. These pressure effects not only confirm the existence of strong spin-lattice coupling but also reveal the detailed information about the lattice deformation effect on the magnetic properties in such 2DMS, which would be a benefit for the further understanding and manipulation of the magnetism in 2D materials.

Visualization of domain structure evolution under an electrical bias has been carried out in ferroelectric La:HfO2 capacitors by a combination of Piezoresponse Force Microscopy (PFM) and pulse switching techniques to study the nanoscopic mechanism of polarization reversal and the wake-up process. It has been directly shown that the main mechanism behind the transformation of the polarization hysteretic behavior and an increase in the remanent polarization value upon the alternating current cycling is electrically induced domain de-pinning. PFM imaging and local spectroscopy revealed asymmetric switching in the La:HfO2 capacitors due to a significant imprint likely caused by the different boundary conditions at the top and bottom interfaces. Domain switching kinetics can be well-described by the nucleation limited switching model characterized by a broad distribution of the local switching times. It has been found that the domain velocity varies significantly throughout the switching process indicating strong interaction with structural defects.

We demonstrate a ventilated metamaterial absorber operating at low frequency (<500 Hz). With only two layers of absorption units, high-efficiency absorption (>90%) has been achieved in both simulations and experiments. This high-efficiency absorption under the ventilation condition originates from the weak coupling of two identical split tube resonators constituting the absorber, which leads to the hybridization of the degenerate eigenmodes and breaks the absorption upper limit of 50% for conventional transmissive symmetric acoustic absorbers. The absorber can also be extended to an array and work in free space. The absorber should have potential applications in acoustic engineering where both noise reduction and ventilation are required.

Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the high dislocation density running throughout the InGaN/GaN quantum well (QW) active region. This striking feature is currently ascribed to carrier localization occurring in the InGaN alloy, which hinders their diffusion toward dislocations. However, it was recently reported that another source of defects, disconnected from dislocations, dramatically decreases the radiative efficiency of InGaN/GaN QWs. Those defects, present at the surface, are usually trapped in an InGaN underlayer (UL), which is grown before the QW active region. To get insight into the trapping mechanism, we varied the UL thickness, In content, and materials system (InGaN or InAlN) and studied the photoluminescence decay time at 300 K of a single InGaN/GaN QW. Our data demonstrate that defects are incorporated proportionally to the indium content in the UL. In…

The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs' output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer characteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively to dielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices.

The [001]-oriented Pb(Mg1/3Nb2/3)O3-0.25PbTiO3(PMN-0.25PT) single crystal has been poled by alternating current polarization (ACP). The piezoelectric, dielectric, and electromechanical properties of PMN-0.25PT crystals were investigated with the variations of the electric field, polarization frequency, and cycles. For the piezoelectric performance of the PMN-0.25PT crystal, the optimum ACP condition was obtained under the electric field of 12–18 kV/cm in the frequency range of 20–40 Hz and after 20 cycles. It gives the crystals an increase by 40% from 1220 pC/N to 1730 pC/N in the piezoelectric coefficient compared with traditional direct current polarization. The patterns of the periodic stripe nanodomains under different polarization conditions were revealed by piezoresponse force microscopy. The enhancement of the piezoelectric performance is attributed to the high density of these domain walls. This work indicates that ACP is an effective way to modify the piezoelectric performance of PMN-0.25PT crystals and make it a promising candidate for sensors and transducers.

Epitaxial p-i-n structures grown on native GaN substrates have been fabricated and used to extract the impact ionization coefficients in GaN. The photomultiplication method has been used to experimentally determine the impact ionization coefficients; avalanche dominated breakdown is confirmed by variable-temperature breakdown measurements. To facilitate photomultiplication measurements of both electrons and holes, the structures include a thin pseudomorphic In0.07Ga0.93N layer on the cathode side of the drift layer. Illumination with 193 nm and 390 nm UV light has been performed on diodes with different intrinsic layer thicknesses. From the measured multiplication characteristics, the impact ionization coefficients of electrons (α) and holes (β) were determined for GaN over the electric field range from 2 MV/cm to 3.7 MV/cm. The results show that for transport along the c-axis, holes dominate the impact ionization process at lower electric field strengths; the impact ionization coefficient of electrons becomes comparable to that of holes (β/α<5) for electric field strengths above…

In this paper, we propose an angle- and polarization-insensitive broadband metamaterial absorber with a resistive fan-shaped resonator. First, the symmetric fan-shaped resonator is designed, and four lumped resistors are loaded in the gap between each fan-shaped circular sector on the top layer to increase the bandwidth. Based on the circuit parameters, the periodic structure of the fan-shaped resonator is designed using full-wave analysis. The proposed absorber is fabricated using a printed circuit board process in a single layer. The experimental results indicate that an absorptivity value greater than 96% was achieved in the frequency range of 7–12.8 GHz for all polarization angles at normal incidence. Under oblique incidence, the measured absorptivity was greater than 90% in the range of 7–12.1 GHz when the incident angle varied from 0° to 45° in the transverse electric mode. In the transverse magnetic mode, the measured absorptivity was greater than 90% between 7.1 and 9.3 GHz when the incident angle varied from 0° to 45°.

Up until recently, the rational design of mechanical metamaterials has usually involved devising geometrical arrangements of micro-architectures that deliver unusual properties on the macro-scale. A less explored route to rational design is spatially distributing materials with different properties within lattice structures to achieve the desired mechanical properties. Here, we used computational models and advanced multi-material 3D printing techniques to rationally design and additively manufacture multi-material cellular solids for which the elastic modulus and Poisson's ratio could be independently tailored in different (anisotropic) directions. The random assignment of a hard phase to originally soft cellular structures with an auxetic, zero Poisson's ratio, and conventional designs allowed us to cover broad regions of the elastic modulus-Poisson's ratio plane. Patterned designs of the hard phase were also used and were found to be effective in the independent tuning of the elastic properties. Close inspection of the strain distributions associated with the different types of…

The terahertz spectral region has received tremendous attention for label free chemical and biological sensing, due to the presence of molecular fingerprints, low energy characteristics, and remote sensing capabilities. However, a major hindrance for the realization of a high performance terahertz bio-chemical sensor comes from the large absorption of terahertz waves by aqueous solution. Here, we overcome this limitation by confining the analyte-aqueous solution in a nanovolumetric fluidic chamber, integrated on metamaterial resonant cavities. The metamaterial resonators confine electromagnetic fields in extremely subwavelength space and hence allow for the enhanced interaction between the nanovolumetric analyte-aqueous solution and terahertz waves, while minimizing the absorption loss. We compare the sensing performance of split ring resonator and Fano resonator systems as metamaterial resonators. As a demonstration of chemical sensing, three alcoholic solutions with different concentrations were measured. Selective adenosine triphosphate (ATP) sensing capability was examined…

We propose an acoustic metasurface for perfect absorption at dual frequencies within a compact space. Meta-molecules of the metasurface contain four subwavelength meta-atoms whose cavities are coiled by three foldings. The meta-atoms comprising a meta-molecule have slightly different neck sizes to obtain hybrid resonances at desired frequencies. In order to consider an effect of coiled spaces in the meta-atoms, we use equivalent straight cavities with an effective length in an analytical model. By using the analytical model, metasurfaces are optimally designed for perfect absorption at desired frequencies. The experimental results show that a λ/23-metasurface exhibits over 99% energy absorption at 294 Hz and 406 Hz. Furthermore, we define another optimization problem to minimize the thickness of the metasurface for perfect absorption at two desired frequencies. The experimental results show that a λ/32-metasurface exhibits over 91% energy absorption at 281 Hz and 99% sound energy absorption at 403 Hz.

HfO2-based ferroelectrics (FE-HfO2) have shown promise as an emerging 1-T (single-transistor) non-volatile memory candidate because of its attractive features, such as CMOS compatibility, scalability, fast switching speed, low power, and long retention. The nucleation limited switching (NLS) model, which attributes the polarization switching mainly to the waiting time of nucleation of reversed domains, has been well developed to interpret experimental results for both ferroelectric switching and retention of metal-ferroelectric-metal (MFM) devices based on conventional perovskite ferroelectric materials [such as Pb(Zr, Ti)O3]. However, the applicability of this model to HfO2-based MFM capacitors is not well understood, although some recent experimental evidence has suggested so. In this study, we thoroughly investigated the switching kinetics and the retention characteristics of FE-HfO2 in the context of the NLS model. We show that (1) the NLS model agrees well with the experimental results of switching kinetics over 5 orders of pulse widths, and the extracted modeling parameters…

High quality factor optical microcavities have been employed in a variety of material systems to enhance nonlinear optical interactions. While single-crystalline aluminum nitride microresonators have recently emerged as a low loss platform for integrated nonlinear optics such as four wave mixing and Raman lasing, few studies have investigated this material for second-harmonic generation. In this letter, we demonstrate an optimized fabrication of dually resonant phase-matched ring resonators from epitaxial aluminum nitride thin films. An unprecendented second-harmonic generation efficiency of 17 000%/W is obtained in the low power regime, and pump depletion is observed at a relatively low input power of 3.5 mW. This poses epitaxial aluminum nitride as the highest efficiency second-harmonic generator among current integrated platforms.

A highly self-textured Ga2O3-substituted Li7La3Zr2O12 (LLZO-Ga) solid electrolyte with a nominal composition of Li6.55Ga0.15La3Zr2O12 is obtained by a simple and low-cost solid-state reaction technique, requiring no seed crystals to achieve grain orientation. The as-prepared self-textured LLZO-Ga shows a strong (420) preferred orientation with a high Lotgering factor of 0.91. Coherently, a terrace-shaped microstructure consisting of many parallel layers, indicating a two-dimensional-like growth mode, is clearly observed in the self-textured sample. As a result, the highly self-textured garnet-type lithium-ion conducting solid electrolyte of LLZO-Ga exhibits an extremely high ionic conductivity, reaching a state-of-the-art level of 2.06 × 10−3 S cm−1 at room temperature (25 °C) and thus shedding light on an important strategy for improving the structure and ionic conductivity of solid electrolytes.

We present a 2.5 GHz quantum key distribution setup with the emphasis on a simple experimental realization. It features a three-state time-bin protocol based on a pulsed diode laser and a single intensity modulator. Implementing an efficient one-decoy scheme and finite-key analysis, we achieve record breaking secret key rates of 1.5 kbps over 200 km of standard optical fibers.

In this letter, gate leakage mechanisms in different gate contact normally off p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) have been studied by the temperature-dependent current-voltage (IG-VG) measurement. It is found that two-dimensional variable range hopping is responsible for gate leakage current at the reverse gate bias and low forward gate bias in both high-leakage and low-leakage Schottky gate contact devices. At high forward gate bias, in the case of high-leakage Schottky contact, the dominant current conduction mechanism is found to be thermionic field emission while it is Poole–Frenkle emission (PFE) for the case of low-leakage Schottky contact and the activation energy of trap states for PFE current is derived as 0.6 eV. Besides, related models are also proposed to describe the gate leakage current in p-GaN gate HEMTs and they match well with the experimental gate leakage current within a wide range of temperatures and gate biases.

This paper presents topology optimization for thermal cloaks expressed by level-set functions and explored using the covariance matrix adaptation evolution strategy (CMA-ES). Designed optimal configurations provide superior performances in thermal cloaks for the steady-state thermal conduction and succeed in realizing thermal invisibility, despite the structures being simply composed of iron and aluminum and without inhomogeneities caused by employing metamaterials. To design thermal cloaks, a prescribed objective function is used to evaluate the difference between the temperature field controlled by a thermal cloak and when no thermal insulator is present. The CMA-ES involves searches for optimal sets of level-set functions as design variables that minimize a regularized fitness involving a perimeter constraint. Through topology optimization subject to structural symmetries about four axes, we obtain a concept design of a thermal cloak that functions in an isotropic heat flux.

The GaAsSb-based quantum well plays a very important role in optoelectronic devices due to its excellent wavelength tunability. When the dimension reduces, the quantum confinement effect will take place and the quantum well in nanowires will show many interesting characteristics. GaAsSb-based quantum-well nanowires are of contemporary interest. However, the properties of the quasi-type-II structure in a single quantum well nanowire have been rarely investigated. Here, we grow GaAs/GaAs0.92Sb0.08/GaAs coaxial single quantum-well nanowires and discussed their power-dependent and temperature-dependent photoluminescence. We find that due to the small band offset of conduction bands, both type-I like and type-II like emission exist in our nanowires. When electrons obtain enough thermal energy through collisions or surrounding environment, they will overcome the barrier and diffuse to the GaAs conduction band, which contributes to the type-II like recombination. These results show the optical property of the quasi-type-II quantum well in nanowires, which can pave the way toward future…

Most wind energy harvesters (WEHs) that have been reported in the literature collect wind energy using only one type of wind-induced vibration, such as vortex-induced vibration (VIV), galloping, and flutter or wake galloping. In this letter, the interaction between VIV and galloping is used to improve the performance of WEHs. For a WEH constructed by attaching a bluff body with a rectangular cross-section to the free end of a piezoelectric cantilever, the measures to realize the interaction are theoretically discussed. Experiments verified the theoretical prediction that the WEHs with the same piezoelectric beam may demonstrate either separate or interactive VIV and galloping, depending on the geometries of the bluff bodies. For the WEHs with the interaction, the wind speed region of the VIV merges with that of the galloping to form a single region with high electrical outputs, which greatly increases the electrical outputs at low wind speeds. The interaction can be realized even when the predicted galloping critical speed is much higher than the predicted VIV critical speed. The…

Small manufacturing-tolerant photonic crystal cavities are systematically designed using topology optimization to enhance the ratio between the quality factor and mode volume, Q/V. For relaxed manufacturing tolerance, a cavity with a bow-tie shape is obtained which confines light beyond the diffraction limit into a deep-subwavelength volume. Imposition of a small manufacturing tolerance still results in efficient designs, however, with diffraction-limited confinement. Inspired by numerical results, an elliptic ring grating cavity concept is extracted via geometric fitting. Numerical evaluations demonstrate that for small sizes, topology-optimized cavities enhance the Q/V-ratio by up to two orders of magnitude relative to standard L1 cavities and more than one order of magnitude relative to shape-optimized L1 cavities. An increase in cavity size can enhance the Q/V-ratio by an increase in the Q-factor without a significant increase in V. Comparison between optimized and reference cavities illustrates that significant reduction of V requires big topological changes in the cavity.

We report on a high-performance NO2 sensor based on a one dimensional MoS2 nanowire (NW) network. The MoS2 NW network was synthesized using chemical transport reaction through controlled turbulent vapor flow. The crystal structure and surface morphology of MoS2 NWs were confirmed by X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning electron microscopy. Further, the sensing behavior of the nanowires was investigated at different temperatures for various concentrations of NO2 and the sensor exhibited about 2-fold enhanced sensitivity with a low detection limit of 4.6 ppb for NO2 at 60 °C compared to sensitivity at room temperature. Moreover, it showed a fast response (16 s) with complete recovery (172 s) at 60 °C, while sensitivity of the device was decreased at 120 °C. The efficient sensing with reliable selectivity toward NO2 of the nanowires is attributed to a combination of abundant active edge sites along with a large surface area and tuning of the potential barrier at the intersections of nanowires during adsorption/desorption of gas molecules.

Motivated by the recent synthesis of an ultrathin film of layered Bi2O2Se [Wu et al., Nat. Nanotechnol. 12, 530 (2017); Wu et al., Nano Lett. 17, 3021 (2017)], we have systematically studied the thermoelectric properties of a Bi2O2Se nanosheet using first principles density functional theory combined with semiclassical Boltzmann transport theory. The calculated results indicate that the Bi2O2Se nanosheet exhibits a figure of merit (ZT) of 3.35 for optimal n-type doping at 800 K, which is much larger than the ZT value of 2.6 at 923 K in SnSe known as the most efficient thermoelectric material [Zhao et al., Nature 508, 373 (2014)]. Equally important, the high ZT in the n-type doped Bi2O2Se nanosheet highlights the efficiency of the reduced dimension on improving thermoelectric performance as compared with strain engineering by which the ZT of n-type doped bulk Bi2O2Se cannot be effectively enhanced.

We investigate and experimentally validate the concept of bandgap tuning in a locally resonant metamaterial beam exploiting shape memory alloy (SMA) resonators. The underlying mechanism is based on the difference between the martensitic phase (low temperature) and austenitic phase (high temperature) elastic moduli of the resonators, enabling a significant shift of the bandgap for a sufficient temperature change. Experimental validations are presented for a base-excited locally resonant metamaterial beam with SMA resonators following a brief theoretical background. It is shown that the lower bound of the bandgap as well as the bandwidth can be increased by 15% as the temperature is increased from 25 °C to 45 °C for the specific SMAs used in this work for concept demonstration. The change in the bandgap lower bound frequency and its bandwidth is governed by the square root of the fully austenitic to fully martensitic elastic moduli ratio, and it could be as high as 70% or more for other SMAs reported in the literature.

An ultrathin, 5 nm, Al2O3 film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The Al2O3 layer showed a low surface roughness of 0.15 nm, a low leakage current, and a high breakdown voltage of 6 V. In particular, a very high gate capacitance of 720 nF/cm2 was achieved, making it possible for the a-IGZO TFTs to not only operate at a low voltage of 1 V but also exhibit desirable properties including a low threshold voltage of 0.3 V, a small subthreshold swing of 100 mV/decade, and a high on/off current ratio of 1.2 × 107. Furthermore, even under an ultralow operation voltage of 0.6 V, well-behaved transistor characteristics were still observed with an on/off ratio as high as 3 × 106. The electron transport through the Al2O3 layer has also been analyzed, indicating the Fowler–Nordheim tunneling mechanism.

Magnetic heterostructures consisting of high-resistivity (238 ± 5 µΩ cm)-W/CoFeB/MgO are prepared by sputtering and their spin-orbit torques are evaluated as a function of W thickness through an extended harmonic measurement. W thickness dependence of the spin-orbit torque with the Slonczewski-like symmetry is well described by the drift-diffusion model with an efficiency parameter, the so-called effective spin Hall angle, of −0.62 ± 0.03. In contrast, the field-like spin-orbit torque is one order of magnitude smaller than the Slonczewski-like torque and shows no appreciable dependence on the W thickness, suggesting a different origin from the Slonczewski-like torque. The results indicate that high-resistivity W is promising for low-current and reliable spin-orbit torque-controlled devices.

We have demonstrated a β-Ga2O3 metal-semiconductor field-effect transistor (MESFET) with a high off-state breakdown voltage (344 V), based on a quasi-two-dimensional β-Ga2O3 field-plated with hexagonal boron nitride (h-BN). Both the β-Ga2O3 and h-BN were mechanically exfoliated from their respective crystal substrates, followed by dry-transfer onto a SiO2/Si substrate for integration into a high breakdown voltage quasi-two-dimensional β-Ga2O3 MESFETs. N-type conducting behavior was observed in the fabricated β-Ga2O3 MESFETs, along with a high on/off current ratio (>106) and excellent current saturation. A three-terminal off-state breakdown voltage of 344 V was obtained, with a threshold voltage of −7.3 V and a subthreshold swing of 84.6 mV/dec. The distribution of electric fields in the quasi-two-dimensional β-Ga2O3 MESFETs was simulated to analyze the role of the dielectric h-BN field plate in improving the off-state breakdown voltage. The stability of the field-plated β-Ga2O3 MESFET in air was confirmed after storing the MESFET in ambient air for one month. Our results pave the…

Metamaterial absorbers and diffusers provide powerful routes to decrease the backward reflection significantly with advantages of ultrathin profile and customized bandwidth. Simultaneous control of the absorption and scattering behaviors of the metamaterials which helps to improve the suppression capabilities of backward reflection, however, still remains a challenge. Aiming at this goal, we propose a metasurface constituted by two kinds of elements in a pseudorandom arrangement. By the use of indium tin oxide with moderate sheet resistance in the meta-atoms, enhanced absorption of energy can be achieved in a broad spectrum when interacted with illuminated waves. In the meanwhile, electromagnetic diffusion will be invoked from the destructive interference among the elements, giving rise to significant reduction of specular reflection as a result. Excellent agreements are observed between simulation and experiment with pronounced reflection suppression from 6.8 GHz to 19.4 GHz. In addition, the optical transparence of the patterns and substrates makes the proposed metasurface a…

We report the optimal focusing of acoustic vortex beams by using flat lenses based on a Fresnel-spiral diffraction grating. The flat lenses are designed by spiral-shaped Fresnel zone plates composed of one or several arms. The constructive and destructive interferences of the diffracted waves by the spiral grating result in sharp acoustic vortex beams, following the focal laws obtained in analogy with the Fresnel zone plate lenses. In addition, we show that the number of arms determines the topological charge of the vortex, allowing the precise manipulation of the acoustic wave field by flat lenses. The experimental results in the ultrasonic regime show excellent agreement with the theory and full-wave numerical simulations. A comparison with beam focusing by Archimedean spirals also showing vortex focusing is given. The results of this work may have potential applications for particle trapping, ultrasound therapy, imaging, or underwater acoustic transmitters.

We demonstrate a robust, scale-factor-free vector magnetometer, which uses a closed-loop frequency-locking scheme to simultaneously track Zeeman-split resonance pairs of nitrogen-vacancy (NV) centers in diamond. This technique offers a three-orders-of-magnitude increase in dynamic range compared to open-loop methodologies; is robust against fluctuations in temperature, resonance linewidth, and contrast; and allows for simultaneous interrogation of multiple transition frequencies. By directly detecting the resonance frequencies of NV centers oriented along each of the diamond's four tetrahedral crystallographic axes, we perform full vector reconstruction of an applied magnetic field.

Hydrogen has a strong influence on the electrical properties of transparent conducting oxides where it can give rise to shallow donors and can passivate deep compensating defects. We have carried out infrared absorption experiments on H- and D-doped β-Ga2O3 that involve temperature- and polarization-dependent effects as well as relative H- and D-concentrations to probe the defect structures that hydrogen can form. The results of analysis of these data, coupled with detailed theoretical calculations, show that the dominant O-H vibrational line observed at 3437 cm−1 for hydrogenated Ga2O3 is due to a relaxed VGa-2H center.

In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V−1 s−1,…

Optical components based on metasurfaces (metalenses) offer an alternative methodology for microlens arrays. In particular, metalens arrays have the potential of being monolithically integrated with infrared focal plane arrays (IR FPAs) to increase the operating temperature and sensitivity of the latter. In this work, we demonstrate a type of transmissive metalens that focuses the incident light (λ = 3–5 μm) on the detector plane after propagating through the substrate, i.e., solid-immersion type of focusing. The metalens is fabricated by etching the backside of the detector substrate material (GaSb here), making this approach compatible with the architecture of back-illuminated FPAs. In addition, our designs work for all incident polarizations. We fabricate a 10 × 10 metalens array that proves the scalability of this approach for FPAs. In the future, these solid-immersion metalenses arrays will be monolithically integrated with IR FPAs.

Silicon-nitride-on-insulator (SiNOI) is an attractive platform for optical frequency comb generation in the telecommunication band because of the low two-photon absorption and free carrier induced nonlinear loss when compared with crystalline silicon. However, high-temperature annealing that has been used so far for demonstrating Si3N4-based frequency combs made co-integration with silicon-based optoelectronics elusive, thus reducing dramatically its effective complementary metal oxide semiconductor (CMOS) compatibility. We report here on the fabrication and testing of annealing-free SiNOI nonlinear photonic circuits. In particular, we have developed a process to fabricate low-loss, annealing-free, and crack-free Si3N4 740-nm-thick films for Kerr-based nonlinear photonics featuring a full process compatibility with front-end silicon photonics. Experimental evidence shows that micro-resonators using such annealing-free silicon nitride films are capable of generating a frequency comb spanning 1300–2100 nm via optical parametrical oscillation based on four-wave mixing. This work…

We report a simple, efficient method to fabricate micro/nanoscale hierarchical structures on one side of polytetrafluoroethylene mesh surfaces, using one-step femtosecond laser direct writing technology. The laser-treated surface exhibits superhydrophobicity in air and superaerophilicity in water, resulting in the mesh possessing the hydrophobic/superhydrophobic asymmetrical property. Bubbles can pass through the mesh from the untreated side to the laser-treated side but cannot pass through the mesh in the opposite direction. The asymmetrical mesh can therefore be designed for the directional transportation and continuous collection of gas bubbles in aqueous environments. Furthermore, the asymmetrical mesh shows excellent stability during corrosion and abrasion tests. These findings may provide an efficient route for fabricating a durable asymmetrical mesh for the directional and continuous transport of gas bubbles.

The integration of quantum emitters with integrated photonics enables complex quantum photonic circuits that are necessary for photonic implementation of quantum simulators, computers, and networks. Thin-film lithium niobate is an ideal material substrate for quantum photonics because it can tightly confine light in small waveguides and has a strong electro-optic effect that can switch and modulate single photons at low power and high speed. However, lithium niobate lacks efficient single-photon emitters, which are essential for scalable quantum photonic circuits. We demonstrate deterministic coupling of single-photon emitters with a lithium niobate photonic chip. The emitters are composed of InAs quantum dots embedded in an InP nanobeam, which we transfer to a lithium niobate waveguide with nanoscale accuracy using a pick-and-place approach. An adiabatic taper transfers single photons emitted into the nanobeam to the lithium niobate waveguide with high efficiency. We verify the single photon nature of the emission using photon correlation measurements performed with an on-chip…

Herein, ferroelastic domain switching from the nonpolar b-axis to the polar c-axis oriented domain in 7%-YO1.5-substituted HfO2 (YHO-7) epitaxial ferroelectric films is demonstrated. Scanning transmission electron microscopy (STEM) indicates that the polarization of a pristine film deposited on a Sn-doped In2O3/(001)YSZ substrate by the pulsed laser deposition method tends to be along the in-plane direction to avoid a strong depolarization field with respect to the out-of-plane direction. Applying an electric field aids in ferroelastic domain switching in YHO-7 films. Such films exhibit ferroelectric characteristics with a relatively large saturated polarization around 30 μC/cm2 by polarization reorientation from the in-plane to the out-of-plane directions and an increased dielectric constant. The synchrotron X-ray diffraction measurements with a focused beam for the pristine and poled area indicate ferroelastic 90° domain switching as the odd number reflection disappears, which is only allowed in the nonpolar b-axis orientation. STEM observations also show a significant increase in…

In recent years, photoelectronic synaptic devices have emerged as a platform for use in next-generation neuromorphic systems and artificial neural networks (ANNs). In this paper, we report an artificial photoelectronic synapse based on an ion-gel gated In-Zn-O phototransistor. The phototransistor is stimulated by a deep ultraviolet light spike, and it can process and store information in the form of an electric current. Key biological synaptic behaviors were investigated, including excitatory post-synaptic current and paired pulse facilitation. Furthermore, channel conduction can be changed by photoelectric synergy in order to simulate potentiation and depression behavior in the human brain. Most importantly, four forms of spike-timing dependent plasticity learning principles were realized by a photoelectric hybrid stimulation. Our studies provide a path towards hybrid photoelectronic ANNs capable of performing solar-blind sensitive tasks.

Ferroelectric orthorhombic Hf0.5Zr0.5O2 thin films have been stabilized epitaxially on La2/3Sr1/3MnO3/SrTiO3(001) by pulsed laser deposition. The epitaxial orthorhombic films, (111)-oriented and with a very flat surface, show robust ferroelectric properties at room temperature. They present a remnant polarization around 20 μC/cm2 without the need of a wake-up process, a large coercive electric field of around 3 MV/cm, an extremely long retention extending well beyond 10 years, and an endurance up to about 108 cycles. Such outstanding properties in the nascent research on epitaxial HfO2-based ferroelectric films can pave the way for a better understanding of the effects of orientation, interfaces, strain, and defects on ferroelectricity in HfO2.

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn3Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T1 = 275 K and T2 = 200 K, below the antiferromagnetic phase transition at TN ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω−1 cm−1 to near zero below T1, coincident with the vanishing of the weak ferromagnetic moment. This illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched on and off by a subtle change in the symmetry of the magnetic structure near room temperature.

Superconducting thin films with high intrinsic kinetic inductance are of great importance for photon detectors, achieving strong coupling in hybrid systems, and protected qubits. We report on the performance of titanium nitride resonators, patterned on thin films (9–110 nm) grown by atomic layer deposition, with sheet inductances of up to 234 pH/□. For films thicker than 14 nm, quality factors measured in the quantum regime range from 0.2 to 1.0 × 106 and are likely limited by dielectric two-level systems. Additionally, we show characteristic impedances up to 28 kΩ, with no significant degradation of the internal quality factor as the impedance increases. These high impedances correspond to an increased single photon coupling strength of 24 times compared to a 50 Ω resonator, transformative for hybrid quantum systems and quantum sensing.

We have developed a method of terahertz (THz) solid immersion (SI) microscopy for continuous-wave reflection-mode imaging of soft biological tissues with a sub-wavelength spatial resolution. In order to achieve strong reduction in the dimensions of the THz beam caustic, an electromagnetic wave is focused into the evanescent field volume behind a medium with a high refractive index. We have experimentally demonstrated a 0.15λ-resolution of the proposed imaging modality at λ = 500 μm, which is beyond the Abbe diffraction limit and represents a considerable improvement over the previously-reported arrangements of SI imaging setups. The proposed technique does not involve any sub-wavelength near-field probes and diaphragms, thus, avoiding the THz beam attenuation due to such elements. We have applied the developed method for THz imaging of various soft tissues: a plant leaf blade, cell spheroids, and tissues of the breast ex vivo. Our THz images clearly reveal sub-wavelength features in tissues, therefore, promising applications of THz SI microscopy in biology and medicine.

In this work, we demonstrate an approach for determining radio-frequency (RF) power using electromagnetically induced transparency (EIT) in a Rydberg atomic vapor. This is accomplished by placing alkali atomic vapor in a rectangular waveguide and measuring the electric (E) field strength (utilizing EIT and Autler-Townes splitting) for a wave propagating down the waveguide. The RF power carried by the wave is then related to this measured E-field, which leads to a direct International System of Units measurement of RF power. To demonstrate this approach, we first measure the field distribution of the fundamental mode in the waveguide and then determine the power carried by the wave at both 19.629 GHz and 26.526 GHz from the measured E-field. We show comparisons between the RF power obtained with this technique and those obtained with a conventional power meter.

This paper presents graphene field-effect transistor (GFET) based pressure sensors for tactile sensing. The sensing device comprises GFET connected with a piezoelectric metal-insulator-metal (MIM) capacitor in an extended gate configuration. The application of pressure on MIM generates a piezo-potential which modulates the channel current of GFET. The fabricated pressure sensor was tested over a range of 23.54–94.18 kPa, and it exhibits a sensitivity of 4.55 × 10−3 kPa−1. Further, the low voltage (∼100 mV) operation of the presented pressure sensors makes them ideal for wearable electronic applications.

Of all the materials available to create carrier-selective passivating contacts for silicon solar cells, those based on thin films of doped silicon have permitted to achieve the highest levels of performance. The commonly used chemical vapour deposition methods use pyrophoric or toxic gases like silane, phosphine and diborane. In this letter, we propose a safer and simpler approach based on physical vapour deposition (PVD) of both the silicon and the dopant. An in-situ doped polycrystalline silicon film is formed, upon annealing, onto an ultrathin SiOx interlayer, thus providing selective conduction and surface passivation simultaneously. These properties are demonstrated here for the case of hole-selective passivating contacts, which present recombination current densities lower than 20 fA/cm2 and contact resistivities below 50 mΩ cm2. To further demonstrate the PVD approach, these contacts have been implemented in complete p-type silicon solar cells, together with a front phosphorus diffusion, achieving an open-circuit voltage of 701 mV and a conversion efficiency of 23.0%. These…

We report the mechanism for simultaneous realization of acoustic perfect absorption (PA) and broadband insulation (BI) in the acoustic free field by a layered acoustic metamaterial (LAM). The proposed LAM comprises two critically coupled membrane-type acoustic metamaterials sandwiching a porous material layer. Both theoretical and experimental results verify that the proposed LAM sample can achieve nearly PA (98.4% in experiments) at 312 Hz with a thickness of 15 mm (1/73 of wavelength) and BI in the frequency range of 200–1000 Hz with an areal density of 2.2 kg/m2. In addition, the real parts of both the effective dynamic density and bulk modulus reach zero precisely at the critical frequency of 312 Hz, arising from the monopolar eigenmode of LAM. Our work advances the concept of synthetic design of sound absorption and insulation properties of multi-impedance-coupled acoustic systems and promotes membrane-type acoustic metamaterials to more practical engineering applications.

Corundum-structured iridium oxide (α-Ir2O3), showing p-type conductivity, is a strong candidate to form high-quality pn heterojunctions with α-Ga2O3. We fabricated α-Ir2O3/α-Ga2O3 pn heterojunction diodes and they showed well-defined rectifying current-voltage (I-V) characteristics with the turn-on voltage of about 2.0 V. The band alignment at the α-Ir2O3/α-Ga2O3 interface was investigated by X-ray photoemission spectroscopy, revealing a staggered-gap (type-II) with the valence- and conduction-band offsets of 3.34 eV and 1.04 eV, respectively. The total barrier height for electrons was about 2.4 eV, which reasonably agreed with the turn-on voltage in the I-V characteristics. This means that electrons are mainly attributed to electrical conduction around the turn-on voltage.

Traditional asymmetric transmission of elastic waves is mostly based on mode conversion, which presents a real challenge to get pure-mode elastic waves. In this letter, without the aid of mode conversion, we present an innovative concept of asymmetric flexural wave transmission within a wide frequency band, based on dual-layer elastic wave gradient metasurfaces. According to the generalized Snell's law, we theoretically and numerically design and experimentally demonstrate the asymmetric flexural wave transmission by tuning the supercell lengths of dual-layer metasurfaces. The experimental results confirm that the proposed design provides a wide effective frequency band feature, which agrees well with the theoretical analysis and predictions. Our concept offers the flexibility to control the wave energy flow, opening the route to pragmatic applications in many fields, such as ultrasonic detection, energy harvesting, and vibration control.

Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

The Fermi level in bulk semi-insulating β-Ga2O3 doped with Fe (∼5 × 1018 cm−3) is found to be pinned near Ec − 0.85 eV. At temperatures ≥400 K, Ni Schottky diodes showed good rectification and measurable low frequency capacitance, allowing the measurement of capacitance-frequency (C-f), capacitance-voltage (C-V), and capacitance-temperature (C-T) characteristics. The activation energy and the electron capture cross section obtained were (0.75–0.82) eV and (2–5) × 10−15 cm2, in good agreement with the reported signature of the E2 electron trap assigned to Fe. The concentration of the filled centers determined from C-V was close to the concentration of residual shallow donors in undoped materials. Photoinduced current transient spectroscopy measurements showed that Fe doping does not promote the generation of high densities of deep traps other than those related to Fe.

Carrier removal rates and electron and hole trap densities in β-Ga2O3 films grown by hydride vapor phase epitaxy (HVPE) and irradiated with 18 MeV α-particles and 20 MeV protons were measured and compared to the results of modeling. The electron removal rates for proton and α-radiation were found to be close to the theoretical production rates of vacancies, whereas the concentrations of major electron and hole traps were much lower, suggesting that the main process responsible for carrier removal is the formation of neutral complexes between vacancies and shallow donors. There is a concurrent decrease in the diffusion length of nonequilibrium charge carriers after irradiation, which correlates with the increase in density of the main electron traps E2* at Ec − (0.75–0.78) eV, E3 at Ec − (0.95–1.05) eV, and E4 at Ec − 1.2 eV. The introduction rates of these traps are similar for the 18 MeV α-particles and 20 MeV protons and are much lower than the carrier removal rates.

Recent progress in the development of superconducting nanowire single-photon detectors (SNSPDs) made of amorphous materials has delivered excellent performances and has had a great impact on a range of research fields. Despite showing the highest system detection efficiency (SDE) ever reported with SNSPDs, amorphous materials typically lead to lower critical currents, which have impacts on their jitter performance. Combining a very low jitter and a high SDE remains a challenge. Here, we report on highly efficient superconducting nanowire single-photon detectors based on amorphous MoSi, combining system jitters as low as 26 ps and a SDE of 80% at 1550 nm. We also report detailed observations on the jitter behaviour, which hints at intrinsic limitations and leads to practical implications for SNSPD performance.

Magnesium-doped gallium oxide may be utilized as a semi-insulating material for future generations of power devices. Spectroscopy and hybrid functional calculations were used to investigate defect levels in Czochralski-grown β-Ga2O3. Substitutional Mg dopants act as deep acceptors, while substitutional Ir impurities are deep donors. Hydrogen-annealed Ga2O3:Mg shows an IR peak at 3492 cm−1, assigned to an O-H bond-stretching mode of a neutral MgH complex. Despite compensation by Ir and Si and hydrogen passivation, high concentrations of Mg (1019 cm−3) can push the Fermi level to mid-gap or lower.

Flexible perovskite network photodetectors based on the bulk heterojunction (BHJ) of CH3NH3PbI3 and an organic semiconductor dioctylbenzothieno [2,3-b] benzothiophene (C8BTBT) have been fabricated via a simple, one-step solution process. The responsivity, detectivity, and response time as the critical parameters of CH3NH3PbI3/C8BTBT BHJ network photodetectors reach 8.1 AW−1, 2.17 × 1012 Jones, and 7.1 ms, respectively. Meanwhile, they can maintain over 70% of original performance even when exposed to ambient conditions (humidity ∼ 45%) for 50 days without encapsulation. Furthermore, the CH3NH3PbI3/C8BTBT BHJ network photodetectors fabricated on a polyethylene terephthalate (PET) substrate exhibit superior flexibility at different bending radii and large numbers of bending cycles. The photocurrent just shows a decrease of less than 5% as the devices are bent for 10 000 cycles at a small radius of 7.5 mm. The present research indicates that BHJ networks composed of perovskites and organic semiconductors open up the exciting opportunity for fabricating high-performance, low-cost,…

A three-blade bluff body for wind energy harvesting is proposed and designed. The bluff body with a Y-type cross-section is formed by three rigid thin blades and fixed at the free end of a piezoelectric cantilever beam. Simulations and experiments confirmed that this three-blade structure can achieve much higher energy output than a square prism. The output voltages of horizontal harvesters with different half-angles between the two front blades of the bluff body were measured first. The half-angle dramatically affected the performance of the energy harvester. Half-angles between 60° and 80° are found to be the optimal values for generating a high output voltage. In addition, the performance of the harvester can be enhanced when the length ratio of the rear blade to the front blade is in the range of 4/3–5/3. Interestingly, the output voltage of the vertical three-blade harvester was higher than that of the horizontal one and the optimal half-angle in this case was also between 60° and 80°.

The interplay between hydrogenation and passivation of poly-Si/SiOx contacts to n-type Si wafers is studied using atomic layer deposited Al2O3 and anneals in forming gas and nitrogen. The poly-Si/SiOx stacks are prepared by thermal oxidation followed by thermal crystallization of a-Si:H films deposited by plasma-enhanced chemical vapor deposition. Implied open-circuit voltages as high as 710 mV are achieved for p-type poly-Si/SiOx contacts to n-type Si after hydrogenation. Correlating minority carrier lifetime data and secondary ion mass spectrometry profiles reveals that the main benefit of Al2O3 is derived from its role as a hydrogen source for chemically passivating defects at SiOx; Al2O3 layers are found to hydrogenate poly-Si/SiOx much better than a forming gas anneal. By labelling Al2O3 and the subsequent anneal with different hydrogen isotopes, it is found that Al2O3 exchanges most of its hydrogen with the ambient upon annealing at 400 °C for 1 h even though there is no significant net change in its total hydrogen content.

Full field transmission X-ray microscopy (TXM) is a powerful technique for non-destructive 3D imaging with nanometer-scale spatial resolution. However, to date, the typical acquisition time with the hard X-ray TXM at a synchrotron facility is >10 min for a 3D nano-tomography dataset with sub-50 nm spatial resolution. This is a significant limit on the types of 3D dynamics that can be investigated using this technique. Here, we present a demonstration of one-minute nano-tomography with sub-50 nm spatial resolution. This achievement is made possible with an in-house designed and commissioned TXM instrument at the Full-field X-ray Imaging beamline at the National Synchrotron Light Source-II at Brookhaven National Laboratory. This capability represents an order of magnitude decrease in the time required for studying sample dynamics with 10 s of nm spatial resolution.

Digital coding metasurfaces have attracted attention due to their advantages compared to metamaterials. Many devices have been proposed by encoding the phase responses on metasurfaces such as orbit angular momentum generation, prefect absorbers, and holography. For complete manipulation for propagation of electromagnetic waves, it would be beneficial to control both phase and amplitude responses. Here, we propose a metasurface with independent control of phase and amplitude profiles, which is composed of four unit cells, and the amplitude responses of all unit cells range from 0.3 to 0.7. The four units have phase responses of 0, π/2, π, and 3π/2 separately to mimic the “00,” “01,” “10,” and “11” digital elements. The direction of the reflected beam from the metasurface can be manipulated by different sequences of digital elements, and meanwhile, the intensity of the reflected beam can be modulated through changing different amplitude responses in the same direction. We show that the distributions of both phase and amplitude responses of the metasurface will contribute to scattering…

In contrast to conventional bulk optical components, metasurface-based flat optical devices have shown excellent superiorities on manipulating polarization, phase, and amplitude of incident light. Specifically, flat metalenses play an essential role for applications in imaging and optoelectronic integration. Several metalenses operating at visible or near-infrared wavelengths have been recently demonstrated. However, flat optics for the long-wavelength infrared (LWIR) has received relatively less attention. Here, we demonstrate a polarization-insensitive, all-dielectric metalens operating at LWIR. The metalens has a numerical aperture of 0.6 at the wavelength λ = 10.6 μm. It can focus incident light down to a spot as small as ∼1.08λ and exhibits high-resolution imaging performance. In addition, because the metalens is fabricated by single step photolithography and CMOS-compatible processes, it is easy to realize high-throughput manufacture, which provides an efficient way for the development of compact optical devices for LWIR technology.