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The article
Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors
Ning Xu, Ronghui Hao, Fu Chen, Xiaodong Zhang, Hui Zhang, Peipei Zhang and 6 more
- Rank
- 58 of 2,351
- Percentile
- top 2.5%
- Where
- Applied Physics Letters, 2018
- Citations
- 121
From the 2018 list, OpenAlex counts as of 2026-10-29.
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