The 100 most-cited articles in Applied Physics Letters, 2017

Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga2O3 (001) substrate. The specific on-resistance of the Ga2O3 FP-SBD was estimated to be 5.1 mΩ·cm2. Successful field-plate engineering resulted in a high breakdown voltage of 1076 V. A larger-than-expected effective barrier height of 1.46 eV, which was extracted from the temperature-dependent current–voltage characteristics, could be caused by the effect of fluorine atoms delivered in a hydrofluoric acid solution process.

Piezoelectricity is a unique material property that converts mechanical energy into electricity or vice versa. Starting from the group-III monochalcogenide monolayers, we design a series of derivative Janus structures for piezoelectric materials, including Ga2SSe, Ga2STe, Ga2SeTe, In2SSe, In2STe, In2SeTe, GaInS2, GaInSe2, and GaInTe2. Our first-principles calculations show that these Janus structures are thermodynamically and dynamically stable. They have a bandgap in the range of 0.89–2.03 eV, lower than those of the perfect monolayers, and Ga2STe, Ga2SeTe, In2STe, and In2SeTe monolayers are direct gap semiconductors. They possess piezoelectric coefficients up to 8.47 pm/V, over four times the maximum value obtained in perfect group-III monochalcogenide monolayers. Moreover, the broken mirror symmetry of these Janus structures induces out-of-plane dipolar polarization, yielding additional out-of-plane piezoelectric coefficients of 0.07–0.46 pm/V. The enhanced piezoelectric properties enable the development of these novel two-dimensional materials for piezoelectric sensors and…

We present a metamaterial for simultaneous optical transparency and microwave absorption in broadband, which can be used as an optically transparent radar-wave absorber. The proposed metamaterial absorber is made of windmill-shaped elements with the reflection spectra featured by three absorption bands. By properly tailoring the resonances of the structure, we achieve the optimized metamaterial absorptivity that is greater than 90% from 8.3 to 17.4 GHz. In the meantime, excellent optical transmittance is achieved by use of the indium tin oxide (ITO) film with moderate surface resistance, implying that the optical properties of the metamaterial are hardly affected by the periodic meta-atoms. Both numerical simulations and experimental results demonstrate the good performance of the proposed metamaterial, thereby enabling a wide range of applications such as ultrathin detectors and photovoltaic solar cells in the future.

Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of a modulation-doped two-dimensional electron gas (2DEG) at the β-(Al0.2Ga0.8)2O3/Ga2O3 heterojunction by silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the β-(Al0.2Ga0.8)2O3/Ga2O3 material system could enable heterojunction devices for high performance electronics.

We demonstrate electrical tuning of the spectral response of a Mie-resonant dielectric metasurface consisting of silicon nanodisks embedded into liquid crystals. We use the reorientation of nematic liquid crystals in a moderate applied electric field to alter the anisotropic permittivity tensor around the metasurface. By switching a control voltage “on” and “off,” we induce a large spectral shift of the metasurface resonances, resulting in an absolute transmission modulation of up to 75%. Our experimental demonstration of voltage control of dielectric metasurfaces paves the way for new types of electrically tunable metadevices, including dynamic displays and holograms.

We report on atomic layer deposited Hf0.5Zr0.5O2 (HZO)-based capacitors which exhibit excellent ferroelectric (FE) characteristics featuring a large switching polarization (45 μC/cm2) and a low FE saturation voltage (∼1.5 V) as extracted from pulse write/read measurements. The large FE polarization in HZO is achieved by the formation of a non-centrosymmetric orthorhombic phase, which is enabled by the TiN top electrode (TE) having a thickness of at least 90 nm. The TiN films are deposited at room temperature and annealed at 400 °C in an inert environment for at least 1 min in a rapid thermal annealing system. The room-temperature deposited TiN TE acts as a tensile stressor on the HZO film during the annealing process. The stress-inducing TiN TE is shown to inhibit the formation of the monoclinic phase during HZO crystallization, forming an orthorhombic phase that generates a large FE polarization, even at low process temperatures.

GaN-based micro light-emitting diode (μLED) arrays are very promising devices for display applications. In these arrays, each μLED works as a single pixel of a whole image. The electro-optical performance of these μLEDs is an important subject to study. Here, we investigate the influence of LED size on the radiative and non-radiative recombination. The standard ABC model has been widely used to describe the efficiency of GaN based LEDs. Using this model, we extract A, B, and C coefficients for various LED sizes, showing how the competition between radiative and non-radiative recombination processes varies with the LED geometry. Time-resolved photoluminescence allows us to determine coefficient B, related to radiative recombination. Through current-voltage-luminance characterizations, we determine parameters A and C related to Shockley-Read-Hall and Auger recombination. We find that coefficient A is strongly dependent on LED size, indicating a drastic effect of sidewall defects on the performance of LEDs. On the other hand, coefficient C is independent of LED size. This latter result…

In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial β-Ga2O3-based solar blind metal-semiconductor-metal (MSM) photodetectors (PD). The (-201)-oriented β-Ga2O3 thin film was grown using plasma-assisted MBE on c-plane sapphire substrates. MSM devices fabricated with Ni/Au contacts in an interdigitated geometry were found to exhibit peak SR > 1.5 A/W at 236–240 nm at a bias of 4 V with a UV to visible rejection ratio > 105. The devices exhibited very low dark current < 10 nA at 20 V and showed no persistent photoconductivity (PPC) as evident from the sharp transients with a photo-to-dark current ratio > 103. These results represent the state-of-art performance for the MBE-grown β-Ga2O3 MSM solar blind detector.

Due to its electronic-grade quality and potential for scalability, two-dimensional (2D) MoS2 synthesized by chemical vapor deposition (CVD) has been widely explored for electronic/optoelectronic applications. As 2D MoS2 can be considered a 100% surface, its unique intrinsic properties are inevitably altered by the substrate upon which it is grown. However, systematic studies of substrate-layer interactions in CVD-grown MoS2 are lacking. In this study, we have analyzed built-in strain and charge doping using Raman and photoluminescence spectroscopy in 2D MoS2 grown by CVD on four unique substrates: SiO2/Si, sapphire, Muscovite mica, and hexagonal boron nitride. We observed decreasing strain and charge doping in grown MoS2 as the substrates become less rough and more chemically inert. The possible origin of strain was investigated through atomic force microscopy roughness measurements of the as-grown layer and substrate. Our results provide direction for device optimization through careful selection of the growth substrate and pave the way for further investigations to unravel the…

Localized electromagnetic excitation in the form of toroidal dipoles has recently been observed in metamaterial systems. The origin of the toroidal dipole lies in the currents flowing on the surface of a torus. Thus, the exotic toroidal excitations play an important role in determining the optical properties of a system. Toroidal dipoles also contribute towards enabling high quality factor subwavelength resonances in metamaterial systems which could be an excellent platform for probing the light matter interaction. Here, we demonstrate sensing with toroidal resonance in a two-dimensional terahertz metamaterial in which a pair of mirrored asymmetric Fano resonators possesses anti-aligned magnetic moments at an electromagnetic resonance that gives rise to a toroidal dipole. Our proof of concept demonstration opens up an avenue to explore the interaction of matter with toroidal multipoles that could have strong applications in the sensing of dielectrics and biomolecules.

We report the fabrication of ultraviolet photodetector on non-polar (11–20), nearly stress free, Gallium Nitride (GaN) film epitaxially grown on r-plane (1–102) sapphire substrate. High crystalline film leads to the formation of two faceted triangular islands like structures on the surface. The fabricated GaN ultraviolet photodetector exhibited a high responsivity of 340 mA/W at 5 V bias at room temperature which is the best performance reported for a-GaN/r-sapphire films. A detectivity of 1.24 × 109 Jones and noise equivalent power of 2.4 × 10−11 WHz−1/2 were also attained. The rise time and decay time of 280 ms and 450 ms have been calculated, respectively, which were the fastest response times reported for non-polar GaN ultraviolet photodetector. Such high performance devices substantiate that non-polar GaN can serve as an excellent photoconductive material for ultraviolet photodetector based applications.

Parametric conversion and amplification based on three-wave mixing are powerful primitives for efficient quantum operations. For superconducting qubits, such operations can be realized with a quadrupole Josephson junction element, the Josephson Ring Modulator, which behaves as a loss-less three-wave mixer. However, combining multiple quadrupole elements is a difficult task so it would be advantageous to have a three-wave dipole element that could be tessellated for increased power handling and/or information throughput. Here, we present a dipole circuit element with third-order nonlinearity, which implements three-wave mixing. Experimental results for a non-degenerate amplifier based on the proposed third-order nonlinearity are reported.

Featuring low heat dissipation, devices based on spin-wave logic gates promise to comply with increasing future requirements in information processing. In this work, we present the experimental realization of a majority gate based on the interference of spin waves in an Yttrium-Iron-Garnet-based waveguiding structure. This logic device features a three-input combiner with the logic information encoded in a phase of 0 or π of the input spin waves. We show that the phase of the output signal represents the majority of the three phase states of the spin waves in the three inputs. A switching time of about 10 ns in the prototype device provides evidence for the ability of sub-nanosecond data processing in future down-scaled devices.

Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance.

In this work, Mn-doped 0.9BaTiO3-0.1Bi(Mg2/3Nb1/3)O3 ceramics were prepared by the conventional solid state reaction method, and the effect of defect dipoles on energy storage properties of lead free relaxor ferroelectric BaTiO3-based ceramics was studied. The crystal structure, dielectric properties, and energy storage properties were explored in detail. It was found that polarization hysteresis (P-E) loops of 0.9BaTiO3-0.1Bi(Mg2/3Nb1/3)O3-x wt. % MnCO3 (0.2–0.5) ceramics took on high maximum polarization (Pmax) and low remanent polarization (Pr). Meanwhile, recoverable energy density (Wrec) and energy conversion efficiency (η) were obviously enhanced by inducing defect dipoles into BaTiO3-Bi(Mg2/3Nb1/3)O3 relaxor ferroelectrics. The 0.9BaTiO3-0.1Bi(Mg2/3Nb1/3)O3-0.3 wt. % MnCO3 ceramic was found to exhibit good energy storage properties with a Wrec of about 1.70 J/cm3 and a η ∼ 90% under an electric field of 210 kV/cm. The breakdown electric field and Wrec of BaTiO3-based materials were significantly increased in the present work, and they might be good candidates for high power…

A super-resolution imaging technique based on the vortex electromagnetic (EM) wave, which carries orbital angular momentum (OAM), is reported in this paper. The proof-of-concept experiment for the EM vortex imaging is conducted. An imaging processing method based on the real-world OAM radar data is proposed to obtain the target profile. Experimental results validate the effectiveness of the proposed imaging method and demonstrate that the vortex EM wave can be exploited to image targets with high-resolution beyond the limit of the array aperture. This breakthrough on the Rayleigh limit paves the way for innovative techniques in radar imaging and remote sensing.

In this study, we control the oxidant dose to promote ferroelectricity in dopant-free ALD hafnium oxide films. By lowering the oxidant dose during growth, we show that we can achieve near total suppression of the monoclinic phase in sub-10 nm hafnium oxide films with no major impurity doping. Using metal-insulator-metal structures, we demonstrate that lowering the oxidant dose can give rise to a six-fold improvement in remanent polarization. Using this technique, we observe a remanent polarization of 13.5 μC/cm2 in a 6.9 nm-thick hafnium oxide film and show that some ferroelectricity can persist in pure hafnium oxide films as thick as 13.9 nm. Using a trap-assisted tunneling model, we show the relationship between the oxidant dose and oxygen vacancy concentration in the films, suggesting a possible mechanism for the suppression of the monoclinic phase.

We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications.

We explore the capabilities of metallic spintronic thin-film stacks as a source of intense and broadband terahertz electromagnetic fields. For this purpose, we excite a W/CoFeB/Pt trilayer (thickness of 5.6 nm) on a large-area glass substrate (diameter of 7.5 cm) by a femtosecond laser pulse (energy 5.5 mJ, duration 40 fs, and wavelength 800 nm). After focusing, the emitted terahertz pulse is measured to have a duration of 230 fs, a peak field of 300 kV cm−1, and an energy of 5 nJ. In particular, the waveform exhibits a gapless spectrum extending from 1 to 10 THz at 10% of its amplitude maximum, thereby facilitating nonlinear control over matter in this difficult-to-reach frequency range on the sub-picosecond time scale.

A systematic study of Schottky barriers fabricated on (010) β-Ga2O3 substrates is reported. Schottky barrier heights (SBHs) and current transport modes were analyzed using a combination of current-voltage (I-V), capacitance-voltage (C-V) and internal photoemission (IPE) measurements for Pd, Ni, Pt and Au Schottky diodes. Diodes fabricated for each metal choice displayed nearly ideal I-V characteristics with room temperature ideality factors ranging from 1.03 to 1.09, reverse leakage currents below detection limits and thermionic emission as the dominant current transport mode for Ni, Pt and Pd. The SBH values varied depending on the metal choice, ranging from 1.27 V for Pd and 1.54 V for Ni to 1.58 V for Pt and 1.71 V for Au, as determined using IPE measurements. Close agreement was observed between these IPE-determined SBH values and the barrier height values from I-V and C-V measurements for the Ni, Pd and Pt Schottky barriers. In contrast, for Au, a lack of general agreement was seen between the SBH measurement methods, the trends of which appear to be consistent with the…

High-power 265 nm deep-ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) with large-area AlN nanophotonic light-extraction structures that were fabricated by a nanoimprint lithography process are presented. Each DUV-LED has a large active area (mesa size of ∼0.35 mm2) and a uniform current spreading design that allows high injection current operation. We have shown that these DUV-LEDs with their large-area nanoimprinted AlN nanophotonic structures exhibit wider near-field emitting areas, stronger far-field extracted light intensities, and an approximately 20-fold increase in output power when compared with a conventional flat-surface DUV-LED. A large-area nanoimprinted single-chip DUV-LED operating in the UV-C wavelength regime has demonstrated a record continuous-wave output power in excess of 150 mW for an injection current of 850 mA at a peak emission wavelength of 265 nm.

Using first-principles calculations, we systematically investigated the electronic properties of graphene/g-GaN van der Waals (vdW) heterostructures. We discovered that the Dirac cone of graphene could be quite well preserved in the vdW heterostructures. Moreover, a transition from an n-type to p-type Schottky contact at the graphene/g-GaN interface was induced with a decreased interlayer distance from 4.5 to 2.5 Å. This relationship is expected to enable effective control of the Schottky barrier, which is an important development in the design of Schottky devices.

Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 μm wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using reduced pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 μm and 3.1 μm wavelengths, respectively. For the longest wavelength (i.e., 3.1 μm), lasing behavior was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K.

Vertical geometry Ni/Au-β-Ga2O3 Schottky rectifiers were fabricated on Hydride Vapor Phase Epitaxy layers on conducting bulk substrates, and the rectifying forward and reverse current-voltage characteristics were measured at temperatures in the range of 25–100 °C. The reverse breakdown voltage (VBR) of these β-Ga2O3 rectifiers without edge termination was a function of the diode diameter, being in the range of 920–1016 V (average value from 25 diodes was 975 ± 40 V, with 10 of the diodes over 1 kV) for diameters of 105 μm and consistently 810 V (810 ± 3 V for 22 diodes) for a diameter of 210 μm. The Schottky barrier height decreased from 1.1 at 25 °C to 0.94 at 100 °C, while the ideality factor increased from 1.08 to 1.28 over the same range. The figure-of-merit (VBR2/Ron), where Ron is the on-state resistance (∼6.7 mΩ cm2), was approximately 154.07 MW·cm−2 for the 105 μm diameter diodes. The reverse recovery time was 26 ns for switching from +5 V to −5 V. These results represent another impressive advance in the quality of bulk and epitaxial β-Ga2O3.

We report on spin Hall magnetoresistance (SMR) measurements of Pt Hall bars on antiferromagnetic NiO(111) single crystals. An SMR with a sign opposite to conventional SMR is observed over a wide range of temperatures as well as magnetic fields stronger than 0.25 T. The negative sign of the SMR can be explained by the alignment of magnetic moments being almost perpendicular to the external magnetic field within the easy plane (111) of the antiferromagnet. This correlation of magnetic moment alignment and the external magnetic field direction is realized just by the easy-plane nature of the material without the need of any exchange coupling to an additional ferromagnet. The SMR signal strength decreases with increasing temperature, primarily due to the decrease in Néel order by including fluctuations. An increasing magnetic field increases the SMR signal strength as there are fewer domains, and the magnetic moments are more strongly manipulated at high magnetic fields. The SMR is saturated at an applied magnetic field of 6 T, resulting in a spin-mixing conductance of ∼1018 Ω−1 m−2,…

Acoustic holography has extensive possibilities in acoustic sensing, acoustic illusion, contactless particle manipulation, and medical imaging. Based on coating unit cells and perforated panels, an acoustic composite metasurface is constructed with a decoupled modulation of phase and amplitude, which has been used to design acoustic holography. This proposal not only has lower complexity than conventional acoustic holography of active arrays due to the avoidance of complex structures and circuits but also provides more flexibility than acoustic holography based on the acoustic metasurface with phase-only modulation benefitting from the efficient decoupled modulation of phase and amplitude. We have further demonstrated three acoustic holographic applications, such as multi-directional transmission, multi-focal focusing, and holographic imaging. Due to the low complexity and the great flexibility, this proposal has potential to achieve the high-quality holograms with high information content, fine resolution, and large scale.

We explore a phononic crystal Luneburg lens through design, fabrication, and analysis for omnidirectional elastic wave focusing and enhanced energy harvesting both numerically and experimentally. The proposed lens is formed using hexagonal unit cells with blind holes of different diameters, which are determined according to the Luneburg lens refractive index distribution obtained by finite-element simulations of the lowest asymmetric mode Lamb wave band structure. Wave simulations are performed numerically under plane wave excitation from a line source, and focusing is observed at the opposite border of the lens with respect to the incident wave direction. Numerically simulated elastic wave focusing results are validated through a set of experiments. Omnidirectionality is demonstrated by testing the lens under plane wave excitation for different angles of incidence. With piezoelectric energy harvesters located at the boundary of the phononic crystal Luneburg lens, more than an order of magnitude larger power output can be extracted as compared to the baseline case of energy…

We propose a sound absorbing material efficient for low frequency. This material is mainly composed of two axially coupled tubes in series, which are co-planarly coiled in a plane perpendicular to incident waves. By carefully designing the geometric parameters of the coupled tubes, we can overlap the absorption coefficient curves of each individual tube and are therefore able to broaden the frequency bandwidth within which the absorption coefficient is larger than a designed value. A material with an absorption coefficient greater than 0.8 over a frequency bandwidth of 36 Hz for a low frequency of around 100 Hz can be designed, and the wavelength to thickness ratio reaches as high as 38.5. The experiment measurement with the sample made by the 3D printing technique is also conducted to validate the proposed design method. This work may stimulate the research studies on and applications for low frequency sound absorption.

Ferroelectric and piezoelectric properties of Hf1-xZrxO2 (HZO) and pure ZrO2 films with a layer thickness of up to 390 nm prepared by chemical solution deposition (CSD) are investigated. The piezoelectric properties are measured using a double-beam laser interferometer (DBLI) and piezoresponse force microscopy. It is shown that for 100 nm thick films, the maximum remanent polarization is found for pure ZrO2 and reduces for the increasing hafnium content. A stable remanent polarization of 8 μC/cm2 is observed for ZrO2 film thicknesses between 195 and 390 nm. A piezoelectric coefficient of 10 pm/V is extracted from unipolar DBLI measurements. The observed thickness limitation for atomic layer deposition deposited HZO based ferroelectrics can be overcome by the CSD deposition technique presented in this work. Thick ZrO2 films are promising candidates for energy related applications such as pyroelectric and piezoelectric energy harvesting and electrocaloric cooling as well as for microelectromechanical systems.

ScxAl1-xN is a promising ultra-wide bandgap material with a variety of potential applications in electronic, optoelectronic, and acoustoelectric devices related to its large piezoelectric and spontaneous polarization coefficients. We demonstrate growth of ScxAl1-xN on GaN and SiC substrates using plasma-assisted molecular beam epitaxy with x = 0.14–0.24. For metal-rich growth conditions, mixed cubic and wurtzite phases formed, while excellent film quality was demonstrated under N-rich growth conditions at temperatures between 520 and 730 °C. An rms roughness as low as 0.7 nm and 0002 rocking curve full-width at half maximum as low as 265 arc sec were measured for a Sc0.16Al0.84 N film on GaN. To further demonstrate the quality of the ScAlN material, a high-electron-mobility transistor heterostructure with a Sc0.14Al0.86 N barrier, GaN/AlN interlayers, and a GaN buffer was grown on SiC, which showed the presence of a two-dimensional electron gas with a sheet charge density of 3.4 × 1013 cm−2 and a Hall mobility of 910 cm2/V·s, resulting in a low sheet resistance of 213 Ω/◻.

We report the results of ultraviolet Raman spectroscopy of NiO, which allowed us to determine the spin-phonon coupling coefficients in this important antiferromagnetic material. The use of the second-order phonon scattering and ultraviolet laser excitation (λ = 325 nm) was essential for overcoming the problem of the optical selection rules and dominance of the two-magnon band in the visible Raman spectrum of NiO. We established that the spins of Ni atoms interact more strongly with the longitudinal than transverse optical phonons and produce opposite effects on the phonon energies. The peculiarities of the spin-phonon coupling are consistent with the trends given by density functional theory. The obtained results shed light on the nature of the spin-phonon coupling in antiferromagnetic insulators and can help in developing spintronic devices.

Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3 showed single crystal, homoepitaxial growth as determined by high resolution transmission electron microscopy and x-ray diffraction. Corresponding films deposited on Al2O3 were mostly single phase, polycrystalline β-Ga2O3 with a preferred (201¯) orientation. An average conductivity of 732 S cm−1 with a mobility of 26.5 cm2 V−1 s−1 and a carrier concentration of 1.74 × 1020 cm−3 was achieved for films deposited at 550 °C on β-Ga2O3 substrates as determined by Hall-Effect measurements. Two orders of magnitude improvement in conductivity were measured using native substrates versus Al2O3. A high activation efficiency was obtained in the as-deposited condition. The high carrier concentration Ga2O3 thin films achieved by pulsed laser deposition enable application as a low resistance ohmic contact layer in β-Ga2O3 devices.

We report on the development of a microfabricated atomic magnetic gradiometer based on optical spectroscopy of alkali atoms in the vapor phase. The gradiometer, which operates in the spin-exchange relaxation free regime, has a length of 60 mm and cross sectional diameter of 12 mm, and consists of two chip-scale atomic magnetometers which are interrogated by a common laser light. The sensor can measure differences in magnetic fields, over a 20 mm baseline, of 10 fT/[Formula: see text] at frequencies above 20 Hz. The maximum rejection of magnetic field noise is 1000 at 10 Hz. By use of a set of compensation coils wrapped around the sensor, we also measure the sensor sensitivity at several external bias field strengths up to 150 mG. This device is useful for applications that require both sensitive gradient field information and high common-mode noise cancellation.

The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature and the thermionic emission modeling, the fabricated Pt/β-Ga2O3 Schottky diode was found to show good performances at room temperature, including rectification ratio of 1010, ideality factor (n) of 1.1, Schottky barrier height (ΦB) of 1.39 eV, threshold voltage (Vbi) of 1.07 V, ON-resistance (RON) of 12.5 mΩ·cm2, forward current density at 2 V (J@2V) of 56 A/cm2, and saturation current density (J0) of 2 × 10−16 A/cm2. The effective donor concentration Nd − Na was calculated to be about 2.3 × 1014 cm3. Good…

The naturally occurring water has frequency dispersive permittivity at microwave frequencies and thus is a promising constituent material for broadband absorbers. Here, we develop water as the dielectric spacer in the substrate of metal-backed metamaterial (MM) absorbers. The designed substrate is a hybrid of water and a low-permittivity dielectric material. Such a design allows tight packaging of water and easy fabrication of the absorber. We obtain broadband absorption at temperatures of interest by designing the hybrid substrate and MM inclusions. Additionally, the absorption performance of the water-substrate MM absorbers could be tunable according to the environment temperature. We experimentally demonstrate the broadband and thermally tunable absorption performance. We expect that water could replace dielectric layers in other structural MM absorbers to achieve the broadband and thermally tunable absorption performance.

Hydrogen is an impurity species having an important role in the physical properties of semiconductors. Despite numerous studies, the role of hydrogen in oxide semiconductors remains an unsolved puzzle. This situation arises from insufficient information about the chemical state of the impurity hydrogen. Here, we report direct evidence for anionic hydrogens bonding to metal cations in amorphous In–Ga–Zn–O (a-IGZO) thin films for thin-film transistors (TFT) applications and discuss how the hydrogen impurities affect the electronic structure of a-IGZO. Infrared absorption spectra of self-standing a-IGZO thin films prepared by sputtering reveal the presence of hydrogen anions as a main hydrogen species (concentration is ∼1020 cm−3) along with the hydrogens in the form of the hydroxyl groups (∼1020 cm−3). Density functional theory calculations show that bonds between these hydride ions with metal centers give rise to subgap states above the top of the valence band, implying a crucial role of anionic hydrogen in the negative bias illumination stress instability commonly observed in a-IGZO…

This study presents a shoe-mounted nonlinear piezoelectric energy harvester (PEH) with intent to capture energy from human walking. The PEH consists of a piezoelectric cantilever beam magnetically coupled to a ferromagnetic ball and a crossbeam. A sleeve is included to guide the travel of the ball. Experimental measurements and theoretical simulations demonstrate that the proposed design can collect energy from diverse excitation sources with different directions produced by the foot, including vibrations, swing motions, and the compressive force. The ball and the crossbeam sense the swing motion and the compressive force, respectively, and then actuate the piezoelectric beam to function. The piezoelectric beam senses the vibration along the tibial axis and generates electricity. The proposed PEH achieves the superposition of these excitations and generates multiple peaks in voltage output within one gait cycle. The output power generated by the fabricated prototype ranges from 0.03 mW to 0.35 mW when the walking velocity varies from 2 km/h to 8 km/h.

In this study, an investigation is undertaken to determine the effect of gate design parameters on the on-state characteristics (threshold voltage and gate turn-on voltage) of pGaN/AlGaN/GaN high electron mobility transistors (HEMTs). Design parameters considered are pGaN doping and gate metal work function. The analysis considers the effects of variations on these parameters using a TCAD model matched with experimental results. A better understanding of the underlying physics governing the operation of these devices is achieved with a view to enable better optimization of such gate designs.

In this work, the authors proposed a thin artificial structure that could give rise to the strong reduction of both radar wave reflection and infrared thermal emission. This is realized by the subtle combination of two specifically designed metasurface layers that control the infrared emission and microwave absorption, respectively. Our measurement shows that the fabricated sample could have wideband absorption from 3–8 GHz with attenuation efficiency larger than 90% up to incident angles of 30°. In the infrared atmosphere window, it gives a very low emission value of about 0.2. These results show that our sample is practically very promising for the application of a radar-infrared bi-stealth technology.

Bulk liquid water is a strong absorber in the terahertz (THz) frequency range, due to which liquid water has historically been sworn off as a source for THz radiation. Here, we experimentally demonstrate the generation of broadband THz waves from liquid water excited by femtosecond laser pulses. Our measurements reveal the critical dependence of the THz field upon the relative position between the water film and the focal point of the laser beam. The THz radiation from liquid water shows distinct characteristics when compared with the THz radiation from air plasmas with single color optical excitation. First, the THz field is maximized with the laser beam of longer pulse durations. In addition, the p-polarized component of the emitted THz waves will be influenced by the polarization of the optical excitation beam. It is also shown that the energy of the THz radiation is linearly dependent on the excitation pulse energy.

Based on the first-principles calculations, we investigated the ferroelectric properties of two-dimensional (2D) Group-IV tellurides XTe (X = Si, Ge, and Sn), with a focus on GeTe. 2D Group-IV tellurides energetically prefer an orthorhombic phase with a hinge-like structure and an in-plane spontaneous polarization. The intrinsic Curie temperature Tc of monolayer GeTe is as high as 570 K and can be raised quickly by applying a tensile strain. An out-of-plane electric field can effectively decrease the coercive field for the reversal of polarization, extending its potential for regulating the polarization switching kinetics. Moreover, for bilayer GeTe, the ferroelectric phase is still the ground state. Combined with these advantages, 2D GeTe is a promising candidate material for practical integrated ferroelectric applications.

Through finite element analysis and a 3D printing assisted experimental study, we demonstrate a design of mechanical metamaterials for simultaneous mechanical wave filtering and energy harvesting. The mechanical metamaterials compromise a square array of free-standing cantilevers featuring piezoelectric properties being attached to a primary structural frame. A complete bandgap has thus been created via the strong coupling of the bulk elastic wave propagating along the structural frame and the distributed local resonance associated with the square array of piezoelectrically active cantilevers. Operating within the stop-band, external vibration energy has been trapped and transferred into the kinetic energy of the cantilevers, which is further converted into electric energy through mechano-electrical conversion of its integrated piezoelectric elements. Therefore, two distinct functions, vibration isolation and energy harvesting, are achieved simultaneously through the designed mechanical metamaterials.

In a neuromorphic computing system, the complex CMOS neuron circuits have been the bottleneck for efficient implementation of weighted sum operation. The phenomenon of metal-insulator-transition (MIT) in strongly correlated oxides, such as NbO2, has shown the oscillation behavior in recent experiments. In this work, we propose using a MIT device to function as a compact oscillation neuron, achieving the same functionality as the CMOS neuron but occupying a much smaller area. Pt/NbOx/Pt devices are fabricated, exhibiting the threshold switching I-V hysteresis. When the NbOx device is connected with an external resistor (i.e., the synapse), the neuron membrane voltage starts a self-oscillation. We experimentally demonstrate that the oscillation frequency is proportional to the conductance of the synapse, showing its feasibility for integrating the weighted sum current. The switching speed measurement indicates that the oscillation frequency could achieve >33 MHz if parasitic capacitance can be eliminated.

Cubic inorganic perovskite CsPbI3 is a direct bandgap semiconductor, which is promising for optoelectronic applications, such as solar cells, light emitting diodes, and lasers. The intrinsic defects in semiconductors play crucial roles in determining carrier conductivity, the efficiency of carrier recombination, and so on. However, the thermodynamic stability and intrinsic defect physics are still unclear for cubic CsPbI3. By using the first-principles calculations, we study the thermodynamic process and find out that the window for CsPbI3 growth is quite narrow and the concentration of Cs is important for cubic CsPbI3 growth. Under Pb-rich conditions, VPb and VI can pin the Fermi energy in the middle of the bandgap, which results in a low carrier concentration. Under Pb-poor conditions, VPb is the dominant defect and the material has a high concentration of hole carriers with a long lifetime. Our present work gives an insight view of the defect physics of cubic CsPbI3 and will be beneficial for optoelectronic applications based on cubic CsPbI3 and other analogous inorganic…

We employ the sub-atomically focused beam of a scanning transmission electron microscope (STEM) to introduce and controllably manipulate individual dopant atoms in a 2D graphene lattice. The electron beam is used to create defects and subsequently sputter adsorbed source materials into the graphene lattice such that individual vacancy defects are controllably passivated by Si substitutional atoms. We further document that Si point defects may be directed through the lattice via e-beam control or modified (as yet, uncontrollably) to form new defects which can incorporate new atoms into the graphene lattice. These studies demonstrate the potential of STEM for atom-by-atom nanofabrication and fundamental studies of chemical reactions in 2D materials on the atomic level.

The gallium vacancy, an intrinsic acceptor, is identified in β-Ga2O3 using electron paramagnetic resonance (EPR). Spectra from doubly ionized (VGa2−) and singly ionized (VGa−) gallium vacancies are observed at room temperature, without photoexcitation, after an irradiation with high-energy neutrons. The VGa2− centers (with S = 1/2) have a slight angular variation due to a small anisotropy in the g matrix (principal values are 2.0034, 2.0097, and 2.0322). The VGa2− centers also exhibit a resolved hyperfine structure due to equal and nearly isotropic interactions with the 69,71Ga nuclei at two Ga sites (the hyperfine parameters are 1.28 and 1.63 mT for the 69Ga and 71Ga nuclei, respectively, when the field is along the a direction). Based on these g-matrix and hyperfine results, the model for the ground state of the doubly ionized vacancy (VGa2−) has a hole localized on one threefold-coordinated oxygen ion. The vacancy is located at one of the three neighboring gallium sites, and the remaining two gallium neighbors are responsible for the equal hyperfine interactions. The singly…

We propose a broadband, efficient, ultra-thin metal-insulator-metal (MIM) absorber with a simple single-sized disk configuration by utilizing metals with high imaginary part of permittivity (ε″). The physics behind this is that field dissipation is remarkably enhanced in MIM absorbers with high-ε″ metals, significantly extending the absorption bandwidths, which are conventionally limited by magnetic resonances of MIM absorbers with low-ε″ metals. The experimentally demonstrated MIM absorber based on tungsten with high-ε″ yields broadband absorption from visible to near-infrared range (400–1700 nm) with an average measured absorption of 84%. The ultra-thin and single-sized nanostructure with broadband efficient absorption facilitates the scalability to large-area photonic applications.

Thermoelectric properties of monolayer indium selenide (InSe) are investigated by using Boltzmann transport theory and first-principles calculations as a function of Fermi energy and crystal orientation. We find that the maximum power factor of p-type (n-type) monolayer InSe can be as large as 0.049 (0.043) W/K2m at 300 K in the armchair direction. The excellent thermoelectric performance of monolayer InSe is attributed to both its Seebeck coefficient and electrical conductivity. The large Seebeck coefficient originates from the moderate (about 2 eV) bandgap of monolayer InSe as an indirect gap semiconductor, while its large electrical conductivity is due to its unique two-dimensional density of states (DOS), which consists of an almost constant DOS near the conduction band bottom and a sharp peak near the valence band top.

We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 × 106 cm−2 from an optimized GaAs template grown on GaP/Si. The high-quality GaAs templates enable as-cleaved quantum dot lasers to achieve a room-temperature continuous-wave (CW) threshold current of 9.5 mA, a threshold current density as low as 132 A/cm2, a single-side output power of 175 mW, and a wall-plug-efficiency of 38.4% at room temperature. As-cleaved QD lasers show ground-state CW lasing up to 80 °C. The application of a 95% high-reflectivity coating on one laser facet results in a CW threshold current of 6.7 mA, which is a record-low value for any kind of Fabry-Perot laser grown on Si.

Due to similar transmission characteristics of biological synaptic activities, neuromorphic behaviors simulated by organic electrochemical transistors (OECTs) is of great interest. In this letter, the fabrication and performance of multi-gate poly(3-hexylthiophene) (P3HT) OECTs with ion-gel gating are reported. The neuromorphic behaviors, such as dendrite correlated excitatory postsynaptic current (EPSC), paired pulse facilitation, and modulation, were simulated in the OECTs. These behaviors were observed to depend on the degree of temporal correlation and distance between the in-plane-gate and the channel. More importantly, by using dendritic integration from two different gates, spatiotemporally correlated outputs were also emulated. The spatial orientations of the input pulse are defined, and changing the orientation will result in a change in the EPSC amplitude. Our results provide a way to construct spatiotemporally neural network based on multi-gate OECTs.

Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κDia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κDia in the measured 25–225 °C range. Device simulation using the experimental κDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.

Searching for two-dimensional (2D) realistic materials that are able to realize room-temperature quantum spin Hall effects is currently a growing field. Here, through ab initio calculations, we identify arsenene oxide, AsO, as an excellent candidate, which demonstrates high stability, flexibility, and tunable spin-orbit coupling gaps. In contrast to known pristine or functionalized arsenene, the maximum nontrivial bandgap of AsO reaches 89 meV and can be further enhanced to 130 meV under biaxial strain. By sandwiching 2D AsO between boron nitride sheets, we propose a quantum well in which the band topology of AsO is preserved with a sizeable bandgap. Considering that AsO having fully oxidized surfaces are naturally stable against surface oxidization and degradation, this functionality provides a viable strategy for designing topological quantum devices operating at room temperature.

Various tumor types exhibit the spectral fingerprints in the absorption and reflection spectra in visible and especially in near- to short-wave-infrared wavelength ranges. For the purpose of spectral tumor diagnostics by means of diffuse reflectance spectroscopy, we developed a broadband light emitting diode (LED) source consisting of a blue LED for optical excitation, Lu3Al5O12:Ce3+,Cr3+ luminescent garnet for visible to near infrared emissions, and Bismuth doped GeO2 luminescent glass for near-infrared to short-wave infrared emissions. It emits broad-band light emissions continuously in 470–1600 nm with a spectral gap at 900–1000 nm. In comparison to the currently available broadband light sources like halogen lamps, high-pressure discharge lamps and super continuum lasers, the light sources of this paper has significant advantages for spectral tissue diagnostics in high-spectral stability, improved light coupling to optical fibers, potential in low light source cost and enabling battery-drive.

The insertion of an InGaN underlayer (UL) is known to strongly improve the performance of InGaN/GaN quantum well (QW) based blue light emitting diodes (LEDs). However, the actual physical mechanism responsible for it is still unclear. We thus conduct a systematic study and investigate different hypotheses. To this aim, InGaN/GaN single (S) QWs are grown on sapphire and GaN free-standing substrates with or without InGaN UL. This allows us to conclude that (i) improvement of LED performance is due to a higher internal quantum efficiency of the InGaN/GaN SQW and (ii) reduction of structural defects is not at play. Furthermore, we show that neither the surface morphology nor the strain of the top GaN layer before the growth of the QW is affected by the InGaN UL. Finally, we find that the beneficial effect of the InGaN UL is still present after 100 nm of GaN. This result combined with band structure modelling rules out the hypothesis of higher QW oscillator strength induced by a reduction of the internal electric field due to band bending. In conclusion, we demonstrate that the increase…

Mechanical metamaterials exhibit unusual mechanical properties that originate from their topological design. Pentamode metamaterials are particularly interesting because they could be designed to possess any thermodynamically admissible elasticity tensor. In this study, we additively manufacture the metallic pentamode metamaterials from a biocompatible and mechanically strong titanium alloy (Ti-6Al-4V) using an energy distribution method developed for the powder bed fusion techniques. The mechanical properties of the developed materials were a few orders of magnitude higher than those of the similar topologies fabricated previously from polymers. Moreover, the elastic modulus and yield stress of the presented pentamode metamaterials were decoupled from their relative density, meaning that the metallic meta-biomaterials with independently tailored elastic and mass transport (permeability) properties could be designed for tissue regeneration purposes.

Hotspot cooling is critical to the performance and reliability of electronic devices, but existing techniques are not very effective in managing mobile hotspots. We report a hotspot cooling technique based on a jumping-drop vapor chamber consisting of parallel plates of a superhydrophilic evaporator and a superhydrophobic condenser, where the working fluid is returned via the spontaneous out-of-plane jumping of condensate drops. While retaining the passive nature of traditional vapor-chamber heat spreaders (flat-plate heat pipes), the jumping-drop technique offers a mechanism to address mobile hotspots with a pathway toward effective thermal transport in the out-of-plane direction.

In this study, we present an effective strategy to enhance energy-storage density by the Mn2+ substitution of Ti4+ into 0.7(Na0.5Bi0.5)TiO3-0.3SrTiO3 (0.7NBT-0.3ST) relaxor ferroelectric thin films. The influence of Mn doping on the microstructures, ferroelectric properties, and energy-storage performances of the as-prepared films was investigated in detail. The results show that the values of electric break-down field strength and the difference values between maximum polarization and remnant polarization of the thin films are markedly improved by appropriate Mn doping. Owing to the high break-down field strength of 1894 kV/cm and the huge difference value between the maximum polarization and the remnant polarization of 56 μC/cm2, a giant recoverable energy-storage density of 27 J/cm3 was obtained for the 1 mol. % Mn-doped 0.7NBT-0.3ST thin film. These results indicate that the appropriately Mn-doped 0.7NBT-0.3ST thin films are promising for the application of advanced capacitors with high-energy storage density.

Boneless soft robotic fingers cannot apply concentrated forces to pinch a delicate object. This letter reports a three-dimensional design of dielectric elastomer fingers with higher flexural stiffness and close to 90° voltage-controllable bending for object gripping and pinching. It makes use of tension arch flexures to elevate a pre-stretched dielectric elastomer actuator (DEA) into a roof shape and thus magnifies the tension-induced moment, 40 times higher than a flat DEA does, to bend a stiff base frame. Such fingers make normally close-grippers to lift a payload 8–9 times their weight. They also make normally open grippers that pinch a highly deformable raw egg yolk.

In this paper, a flexible, simple-preparation, and low-cost graphene-silk pressure sensor based on soft silk substrate through thermal reduction was demonstrated. Taking silk as the support body, the device had formed a three-dimensional structure with ordered multi-layer structure. Through a simple and low-cost process technology, graphene-silk pressure sensor can achieve the sensitivity value of 0.4 kPa−1, and the measurement range can be as high as 140 kPa. Besides, pressure sensor can have a good combination with knitted clothing and textile product. The signal had good reproducibility in response to different pressures. Furthermore, graphene-silk pressure sensor can not only detect pressure higher than 100 kPa, but also can measure weak body signals. The characteristics of high-sensitivity, good repeatability, flexibility, and comfort for skin provide the high possibility to fit on various wearable electronics.

We report a highly sensitive NEMS DC/low frequency magnetic field sensor consisting of an AlN/FeGaB resonator, with a ΔE effect-based sensing principle. Unlike previously reported magnetic field detection schemes, such as observing induced magnetoelectric voltage, or monitoring impedance, we designed a system to directly measure the reflected output voltage from the sensor as a function of magnetic field. The AlN/FeGaB resonator shows a resonance frequency shift of 3.19 MHz (1.44%), which leads to a high DC magnetic field sensitivity of 2.8 Hz/nT and a limit of detection of 800pT in an unshielded, room temperature and pressure, lab environment.

We present the mechanism for the asymmetric absorption of acoustic waves in a two-port transparent waveguide system by shunting detuned Helmholtz resonators (HRs) pairs in cascade. Theoretical analysis, numerical simulations, and experimental measurements verify that sound energy is almost totally absorbed (96.1%) at ∼373 Hz when sound waves are incident from one side while it is largely reflected back from the opposite side by judiciously designed HRs to provide manipulated surface impedance matching/mismatching to that of air at the opposite sides of the waveguide. Thus, asymmetric acoustic absorber is achieved at a low frequency. We have further demonstrated the flexibility of this methodology to get non-reciprocal absorption and reflectance in multiband and broadband. Our design advances the concept of asymmetric acoustic manipulation in passive two-port systems and may enable sound-absorbing devices for more versatile applications.

Levitated optomechanics is showing potential for precise force measurements. Here, we report a case study to show experimentally the capacity of such a force sensor, using an electric field as a tool to detect a Coulomb force applied onto a levitated nanosphere. We experimentally observe the spatial displacement of up to 6.6 nm of the levitated nanosphere by imposing a DC field. We further apply an AC field and demonstrate resonant enhancement of force sensing when a driving frequency, ωAC, and the frequency of the levitated mechanical oscillator, ω0, converge. We directly measure a force of 3.0 ± 1.5 × 10–20 N with 10 s integration time, at a centre of mass temperature of 3 K and at a pressure of 1.6 × 10–5 mbar.

A theoretical study of the current-driven dynamics of magnetic skyrmions in disordered perpendicularly magnetized ultrathin films is presented. The disorder is simulated as a granular structure, in which the local anisotropy varies randomly from grain to grain. The skyrmion velocity is computed for different disorder parameters and ensembles. Similar behavior is seen for spin-torques due to in-plane currents and the spin Hall effect, where a pinning regime can be identified at low currents with a transition towards the disorder-free case at higher currents, similar to domain wall motion in disordered films. Moreover, a current-dependent skyrmion Hall effect and fluctuations in the core radius are found, which result from the interaction with the pinning potential.

Electromagnetically induced transparency (EIT) arises from coupling between the bright and dark mode resonances that typically involve subwavelength structures with broken symmetry, which results in an extremely sharp transparency band. Here, we demonstrate a tunable broadband EIT effect in a symmetry preserved metamaterial structure at the terahertz frequencies. Alongside, we also envisage a photo-active EIT effect in a hybrid metal-semiconductor metamaterial, where the transparency window can be dynamically switched by shining near-infrared light beam. A robust coupled oscillator model explains the coupling mechanism in the proposed design, which shows a good agreement with the observed results on tunable broadband transparency effect. Such active, switchable, and broadband metadevices could have applications in delay bandwidth management, terahertz filtering, and slow light effects.

A human interactive self-powered wearable sensor is designed using waste by-product prawn shells. The structural origin of intrinsic piezoelectric characteristics of bio-assembled chitin nanofibers has been investigated. It allows the prawn shell to make a tactile sensor that performs also as a highly durable mechanical energy harvester/nanogenerator. The feasibility and fundamental physics of self-powered consumer electronics even from human perception is highlighted by prawn shells made nanogenerator (PSNG). High fidelity and non-invasive monitoring of vital signs, such as radial artery pulse wave and coughing actions, may lead to the potential use of PSNG for early intervention. It is presumed that PSNG has enormous future aspects in real-time as well as remote health care assessment.

By metal-organic vapor-phase epitaxy, we have fabricated InAs quantum dots (QDs) on InGaAs/GaAs metamorphic buffer layers on a GaAs substrate with area densities that allow addressing single quantum dots. The photoluminescence emission from the quantum dots is shifted to the telecom C-band at 1.55 μm with a high yield due to the reduced stress in the quantum dots. The lowered residual strain at the surface of the metamorphic buffer layer results in a reduced lattice mismatch between the quantum dot material and growth surface. The quantum dots exhibit resolution-limited linewidths (mean value: 59 μeV) and low fine-structure splittings. Furthermore, we demonstrate single-photon emission (g(2)(0)=0.003) at 1.55 μm and decay times on the order of 1.4 ns comparable to InAs QDs directly deposited on GaAs substrates. Our results suggest that these quantum dots can not only compete with their counterparts deposited on InP substrates but also constitute an InAs/GaAs-only approach for the development of non-classical light sources in the telecom C-band.

The impact of a relaxed InGaN pseudosubstrate on indium incorporation in a full InGaN heterostructure was investigated. Three types of InGaN pseudosubstrates were tested with different a lattice parameters ranging from 3.190 to 3.205 Å, that is to say, greater than that of a GaN template on sapphire. Samples were loaded together in the growth chamber in order to apply exactly the same growth conditions. The effect of the photoluminescence (PL) emission redshift was observed on InyGa1-yN buffer layers and also on InxGa1-xN/InyGa1-yN multiple quantum wells (MQWs). It was found that these pseudosubstrates have the ability to improve the indium incorporation rate, with an increasing effect as the a lattice parameter increases. A strong PL emission redshift was observed in InxGa1-xN/InyGa1-yN MQWs as a function of the increasing a lattice parameter of the InGaN pseudosubstrate, compared to a reference grown on a GaN template. It has been shown that green and amber emissions can be easily reached. A redshift of up to 42 nm was detected between various InGaN pseudosubstrate samples and up…

The present work reports the fabrication of a ferroelectric tunnel junction based on a CMOS compatible 2.8 nm-thick Hf0.5Zr0.5O2 tunnel barrier. It presents a comprehensive study of the electronic properties of the Pt/Hf0.5Zr0.5O2/Pt system by X-ray photoelectron and UV-Visible spectroscopies. Furthermore, two different scanning probe techniques (Piezoresponse Force Microscopy and conductive-AFM) were used to demonstrate the ferroelectric behavior of the ultrathin Hf0.5Zr0.5O2 layer as well as the typical current-voltage characteristic of a ferroelectric tunnel junction device. Finally, a direct tunneling model across symmetric barriers was used to correlate electronic and electric transport properties of the ferroelectric tunnel junction system, demonstrating a large tunnel electroresistance effect with a tunneling electroresistance effect ratio of 20.

The magnetic field noise in superconducting quantum interference devices (SQUIDs) used for biomagnetic research such as magnetoencephalography or ultra-low-field nuclear magnetic resonance is usually limited by instrumental dewar noise. We constructed a wideband, ultra-low noise system with a 45 mm diameter superconducting pick-up coil inductively coupled to a current sensor SQUID. Thermal noise in the liquid helium dewar is minimized by using aluminized polyester fabric as superinsulation and aluminum oxide strips as heat shields. With a magnetometer pick-up coil in the center of the Berlin magnetically shielded room 2 (BMSR2), a noise level of around 150 aT Hz−1∕2 is achieved in the white noise regime between about 20 kHz and the system bandwidth of about 2.5 MHz. At lower frequencies, the resolution is limited by magnetic field noise arising from the walls of the shielded room. Modeling the BMSR2 as a closed cube with continuous μ-metal walls, we can quantitatively reproduce its measured field noise.

Spin-wave propagation in microfabricated 20 nm thick, 2.5 μm wide Yttrium Iron Garnet (YIG) waveguides is studied using propagating spin-wave spectroscopy (PSWS) and phase resolved micro-focused Brillouin Light Scattering (μ-BLS) spectroscopy. We demonstrate that spin-wave propagation in 50 parallel waveguides is robust against microfabrication induced imperfections and extract spin-wave propagation parameters for the Damon-Eshbach configuration in a wide range of excitation frequencies. As expected from its low damping, YIG allows for the propagation of spin waves over long distances; the attenuation lengths is 25 μm at μ0H = 45 mT. Moreover, direct mapping of spin waves by μ-BLS allows us to reconstruct the spin-wave dispersion relation and to confirm the multi-mode propagation in the waveguides, glimpsed by propagating spin-wave spectroscopy.

Josephson junctions form the essential non-linearity for almost all superconducting qubits. The junction is formed when two superconducting electrodes come within ∼1 nm of each other. Although the capacitance of these electrodes is a small fraction of the total qubit capacitance, the nearby electric fields are more concentrated in dielectric surfaces and can contribute substantially to the total dissipation. We have developed a technique to experimentally investigate the effect of these electrodes on the quality of superconducting devices. We use λ/4 coplanar waveguide resonators to emulate lumped qubit capacitors. We add a variable number of these electrodes to the capacitive end of these resonators and measure how the additional loss scales with the number of electrodes. We then reduce this loss with fabrication techniques that limit the amount of lossy dielectrics. We then use these techniques for the fabrication of Xmon qubits on a silicon substrate to improve their energy relaxation times by a factor of 5.

As an emerging type of optically active material, semiconductor nanocrystals (NCs) stabilized by chiral molecules have attracted much attention. Owing to the wide range of potential applications of chiral perovskite NCs, the development of these materials is of great importance, but there has been a lack of relevant studies. Here, we describe an investigation of the properties of chiral perovskite NCs obtained using post-synthetic ligand exchange (achiral ligand/chiral ligand). These are found to exhibit mirror-image circular dichroism spectra. It is the chirality of the ligand (enantiomeric 1,2-diaminocyclohexane, DACH) that is most likely responsible for the induction of chiroptical activity in these NCs. Furthermore, their chiroptical properties and the corresponding mechanisms are found to depend strongly on the amount of capping ligand. When excess DACH is used to cap the surface of the NCs, their chiroptical properties are induced mainly by aggregation of DACH on the surface in a chiral pattern. In contrast, when small amounts of DACH are used for the capping, it is mainly…

We report the observation of the Goos-Hänchen effect in graphene via a weak value amplification scheme. We demonstrate that the amplified Goos-Hänchen shift in weak measurements is sensitive to the variation of graphene layers. Combining the Goos-Hänchen effect with weak measurements may provide important applications in characterizing the parameters of graphene.

An ultra-high sensitive acetylene (C2H2) Quartz-enhanced photoacoustic spectroscopy (QEPAS) sensor based on a high power laser and a quartz tuning fork with a resonance frequency f0 of 30.72 kHz was demonstrated. An erbium-doped fiber amplifier (EDFA) amplified distributed feedback diode laser with a center wavelength of 1.53 μm was used as the exciting source. A 33.2 ppb minimum detection limit (MDL) at 6534.37 cm−1 was achieved, and the calculated normalized noise equivalent absorption coefficient was 3.54 × 10−8 cm−1 W/√Hz when the laser output power was 1500 mW. The ppb-level detection sensitivity of C2H2 validated the reported QEPAS method.

Metasurfaces have shown powerful abilities in controlling the reflections, transmissions, and polarizations of lights or electromagnetic (EM) waves, independently. Here, we propose a single active metasurface to achieve reconfigurable EM-wave transmissions and reflections, and simultaneously cross-linearized polarization conversions. The active metasurface contains two metallic layers and a middle dielectric layer. The top metallic layer is composed of periodic metallic short wires, which are designed to convert the polarization. PIN diodes are embedded on the bottom metallic layer to switch the polarization and transmission-reflection conversions. When the PIN diode is turned off, the linearly polarized incident waves are transmitted through the metasurface with almost perfect polarization rotation to its orthogonal direction; when the PIN diode is turned on, however, the metasurface will reflect the incident waves with the same linear polarization. Both numerical simulations and experimental results show good reconfigurable performance of the proposed active metasurface.

We studied the impact of different insertion layers (Ta, Pt, and Mg) at the CoFeB|MgO interface on voltage-controlled magnetic anisotropy (VCMA) effect and other magnetic properties. Inserting a very thin Mg layer of 0.1–0.3 nm yielded a VCMA coefficient of 100 fJ/V-m, more than 3 times higher than the average values of around 30 fJ/V-m reported in Ta|CoFeB|MgO-based structures. Ta and Pt insertion layers also showed a small improvement, yielding VCMA coefficients around 40 fJ/V-m. Electrical, magnetic, and X-ray diffraction results reveal that a Mg insertion layer of around 1.2 nm gives rise to the highest perpendicular magnetic anisotropy, saturation magnetization, as well as the best CoFe and MgO crystallinity. Other Mg insertion thicknesses give rise to either under- or over-oxidation of the CoFe|MgO interface; a strong over-oxidation of the CoFe layer leads to the maximum VCMA effect. These results show that precise control over the Mg insertion thickness and CoFe oxidation level at the CoFeB|MgO interface is crucial for the development of electric-field-controlled…

A reflective metasurface enabling linear-to-circular polarization (LP-to-CP) conversion is proposed. The metasurface polarizer is composed of active unit cells incorporating voltage-controlled varactor diodes, where the dispersion responses of the cells can be tailored. When illuminated by an incident wave, the metasurface converts the LP wave from the source to a CP one. Moreover, in a single voltage configuration, two circular polarized waves with different handedness can be obtained at distinct frequencies. Such operation can be tuned in frequency by changing the applied voltage along the metasurface. Simulations are performed to verify the concept, and measurements done on a fabricated prototype validate the polarization conversion performances at microwave frequencies.

Sensing technologies based on terahertz waves have immense potential due to their non-destructive, transparent, and fingerprint spectral response of several materials that are opaque to other parts of the electromagnetic spectrum. Terahertz metasensors reported so far merely exploit the fringing electric field on the top of the subwavelength resonators. Here, we experimentally demonstrate an ultrathin flexible terahertz metamaterial sensor on a low refractive index substrate which enables sensing of analytes from the top and bottom surfaces of the metamaterial, opening up avenues for dual-surface sensing of analytes with fringing resonant fields on both front and rear sides of a metasurface. Since most of the real-world objects have 3D curvatures, the reported flexible metasensor with large mechanical strength and stability in free space would be an ideal platform for ultrasensitive sensing of dielectrics, chemicals, and biomolecules of extremely low concentrations with dual non-planar surfaces.

The perfect absorption (PA) for low-frequency audible sound waves has been achieved by critically coupling the inherent loss factor to the inherent leakage factor of a system, which is constructed by attaching a deep-subwavelength lossy resonant plate (LRP) to a backed rigid wall closely. We have certified it by using the graphical method in the complex frequency plane. By coupling the LRP to an air cavity in front of the rigid wall, the high efficient (>80%) low-frequency broadband absorption is obtained from 99.1 Hz to 294.8 Hz. Here, the thickness of LRP is only 1/13.5 of the relevant wavelength at 294.8 Hz. The impedance analyses further demonstrate that the impedances are perfectly matched between the system and the surrounding background medium at PA.

Electrically injected deep ultra-violet emission is obtained using monolayer thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer precision using plasma assisted molecular beam epitaxy. Single peaked emission spectra are achieved with narrow full width at half maximum for three different light emitting diodes operating at 232 nm, 246 nm, and 270 nm. 232 nm (5.34 eV) is the shortest electroluminescence (EL) emission wavelength reported so far using GaN as the light emitting material and employing polarization-induced doping.

Applications for integrated energy storage and pulse-power devices may have found opportunities in the emergence of the ferroelectric hafnium-zirconium oxide thin film system. To explore the boundaries of this material thin film system, 10 nm thick binary Hf0.5Zr0.5O2 (HZO) thin films are doped with Al or Si (Al or Si-doped HZO). The added dopants provide a distinct shift in behavior from ferroelectric to antiferroelectric characteristics. Si-doped Hf0.5Zr0.5O2 thin films exhibited a larger than 50 J/cm3 energy storage density with an efficiency of over 80%. The Si-doped Hf0.5Zr0.5O2 thin films were cycled 109 times up to 125 °C and maintained a robust 35 J/cm3 energy storage density and greater than 80% efficiency. Al-doped Hf0.5Zr0.5O2 thin films exhibited a larger switching field, leading to a smaller energy storage density and less robust cycling properties than Si-doped Hf0.5Zr0.5O2.

An interference circular cylinder is introduced and placed downstream of the original circular cylinder for improving the output performance of energy harvesting from vortex-induced vibrations. The interference cylinder is fixed, but its spacing distance from the original cylinder can be adjusted. The experimental results show that the harvested power can be greatly enhanced and the bandwidth of the resonance region is also increased depending on the spacing distance and wind speed, compared to the original energy harvester without an interference cylinder. This is attributed to the fact that the flow pattern for the two cylinders changes with varying the spacing distance, resulting in distinctive characteristics of the Strouhal number and coefficients of fluctuating lift force and mean drag force. The present study gives a suggestive guidance in effectively harvesting energy from vortex-induced vibrations by adjusting the spacing distance according to the available wind speed.

As an important problem in acoustics, sound insulation finds applications in a great variety of situations. In the existing schemes, however, there has always been a trade-off between the thinness of sound-insulating devices and their ventilating capabilities, limiting their potentials in the control of low-frequency sound in high ventilation environments. Here, we design and experimentally implement an omnidirectional acoustic barrier with a planar profile, subwavelength thickness (0.18 λ), yet high ventilation. The proposed mechanism is based on the interference between the resonant scattering of discrete states and the background scattering of continuous states which induces a Fano-like asymmetric transmission profile. Benefitting from the binary-structured design of the coiled unit and hollow pipe, it maximally simplifies the design and fabrication while ensuring the ventilation for all the non-resonant units with open tubes. The simulated and measured results agree well, showing the effectiveness of our proposed mechanism to block low frequency sound coming from various…

Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be −0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of −1.75 ± 0.05 eV was…

Trench formation and corner rounding are the key processes to demonstrate high-voltage trench-based vertical GaN devices. In this work, we developed a damage-free corner rounding technology combining Tetramethylammonium hydroxide wet etching and piranha clean. By optimizing the inductively coupled plasma dry etching conditions and applying the rounding technology, two main trench shapes were demonstrated: flat-bottom rounded trench and tapered-bottom rounded trench. TCAD simulations were then performed to investigate the impact of trench shapes and round corners on device blocking capability. GaN trench metal-insulator-semiconductor barrier Schottky rectifiers with different trench shapes were fabricated and characterized. A breakdown voltage over 500 V was obtained in the device with flat-bottom rounded trenches, compared to 350 V in the device with tapered-bottom rounded trenches and 150 V in the device with non-rounded trenches. Both experimental and simulation results support the use of rounded flat-bottom trenches to fabricate high-voltage GaN trench-based power devices.

Bound states in the continuum (BICs) in photonic crystal slabs represent the resonances with an infinite quality (Q)-factor, occurring above the light line for an infinitely periodic structure. We show that a set of BICs can turn into quasi-BICs with a very high Q-factor even for two or three unit cell structures. They are explained by a viewpoint of BICs originating from the tight-binding of individual resonances of each unit cell as in semiconductors. Combined with a reciprocal-space matching technique, the microcavities based on quasi-BICs can achieve a Q-factor as high as defect-based PhC microcavities. These results may enable the experimental studies of BICs in a compact platform as well as realizing high-Q mirrorless microcavities.

In this work, we present a simple and facile one step synthesis strategy to prepare CH3NH3PbBr3 perovskite quantum dots and apply them into the nonvolatile memory. Resistive switching phenomenon was observed in this perovskite quantum dots and polymer composite based memory device with the ON/OFF current ratio larger than 103 as well as good reproducibility and reliability. Flexible memory was also demonstrated, and a possible resistance switching mechanism was discussed. Our work paves a way for the application of organolead halide perovskite quantum dots in flexible and transparent nonvolatile memories.

Ultrasound imaging is widely used to probe the mechanical structure of tissues and visualize blood flow. However, the ability of ultrasound to observe specific molecular and cellular signals is limited. Recently, a unique class of gas-filled protein nanostructures called gas vesicles (GVs) was introduced as nanoscale (∼250 nm) contrast agents for ultrasound, accompanied by the possibilities of genetic engineering, imaging of targets outside the vasculature and monitoring of cellular signals such as gene expression. These possibilities would be aided by methods to discriminate GV-generated ultrasound signals from anatomical background. Here, we show that the nonlinear response of engineered GVs to acoustic pressure enables selective imaging of these nanostructures using a tailored amplitude modulation strategy. Finite element modeling predicted a strongly nonlinear mechanical deformation and acoustic response to ultrasound in engineered GVs. This response was confirmed with ultrasound measurements in the range of 10 to 25 MHz. An amplitude modulation pulse sequence based on this…

We demonstrated the thinning of exfoliated quasi-two-dimensional β-Ga2O3 flakes by using a reactive ion etching technique. Mechanical exfoliation of the bulk β-Ga2O3 by using an adhesive tape was followed by plasma etching to tune its thickness. Since β-Ga2O3 is not a van der Waals material, it is challenging to obtain ultra-thin flakes below a thickness of 100 nm. In this study, an etch rate of approximately 16 nm/min was achieved at a power of 200 W with a flow of 50 sccm of SF6, and under these conditions, thinning of β-Ga2O3 flakes from 300 nm down to ∼60 nm was achieved with smooth morphology. We believe that the reaction between SF6 and Ga2O3 results in oxygen and volatile oxygen fluoride compounds, and non-volatile compounds such as GaFX that can be removed by ion bombardment. The opto-electrical properties were also characterized by fabricating solar-blind photodetectors using the plasma-thinned β-Ga2O3 flakes; these detectors showed fast response and decay with excellent responsivity and selectivity. Our results pave the way for tuning the thickness of two-dimensional…

Smart windows possess the potential to contribute significantly to reducing the world-wide energy consumption in the future. The properties of the thermochromic metal oxide VO2 are closest to the material requirements set by economic considerations for the use as an active layer in thermochromic glazings. We show that the required parameters can be achieved by modifying VO2 on the atomic level, i.e., by simultaneous co-doping with Sr and W on the cation site. In particular, the transition temperature ϑc can be adjusted in the range between 15 and 68 °C by varying W contents, whereas the incorporation of Sr mainly increases the band gap yielding a greyish color of the films. Interestingly, the simultaneous presence of W and Sr enhances both effects. The co-doping leads to values of the luminous transmittance Tlum and the solar transmittance Tsol fulfilling the requirements set by application. The variation of the solar transmittance ΔTsol of the plain thin films on a glass substrate already is larger than 5% for all samples promising that the required value of ΔTsol=10% is achievable…

Pb0.94La0.04[(Zr0.70Sn0.30)0.90Ti0.10]O3 antiferroelectric (AFE) bulk ceramics with both excellent energy storage and release properties were fabricated via the solid-state reaction method. The ceramics exhibited a high releasable energy density of 1.39 J/cm3, high efficiency of 92%, and good temperature stability under 104 kV/cm. Fast discharge current was measured, and a large current density up to 820 A/cm2 was achieved. The nonlinear dielectric behavior resulted in the variation of the discharge period of AFE ceramics. The stored charge was released completely due to the low remanent polarization, and the actually released energy density was about 1.0 J/cm3 in 400 ns. A high peak power density of 6.4 × 109 W/kg without a load resistor and an average power density of 3.16 × 108 W/kg with a 204.7 Ω load resistor were achieved in the rapid discharge process. The excellent energy storage and release properties indicate that the obtained antiferroelectric bulk ceramics are very promising for submicrosecond pulsed capacitors.

Demand for enhanced cooling technologies within various commercial and consumer applications has increased in recent decades due to electronic devices becoming more energy dense. This study demonstrates jumping-droplet based electric-field-enhanced (EFE) condensation as a potential method to achieve active hot spot cooling in electronic devices. To test the viability of EFE condensation, we developed an experimental setup to remove heat via droplet evaporation from single and multiple high power gallium nitride (GaN) transistors acting as local hot spots (4.6 mm × 2.6 mm). An externally powered circuit was developed to direct jumping droplets from a copper oxide (CuO) nanostructured superhydrophobic surface to the transistor hot spots by applying electric fields between the condensing surface and the transistor. Heat transfer measurements were performed in ambient air (22–25 °C air temperature, 20%–45% relative humidity) to determine the effect of gap spacing (2–4 mm), electric field (50–250 V/cm) and applied heat flux (demonstrated to 13 W/cm2). EFE condensation was shown to…

Perfect sound absorbers with a deep-subwavelength thickness are important to applications such as noise reduction and sound detection. But their absorption bandwidths are usually narrow and difficult to adjust. A recent solution for this problem relies on multiple-resonator metasurfaces, which are hard to fabricate. Here, we report on the design, fabrication, and characterization of a single-channel labyrinthine metasurface, which allows total sound absorption at resonant frequency when appropriate amounts of porous media (or critical sound losses) are introduced in the channels. The absorption bandwidth can be tuned by changing the cross-sectional areas of channels. A tradeoff is found between the absorption bandwidth and the metasurface thickness. However, large tunability in the relative absorption bandwidth (from 17% to 121%) is still attainable by such metasurfaces with a deep-subwavelength thickness (0.03–0.13λ).

We demonstrated AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with periodic air-voids-incorporated nanoscale patterns enabled by nanosphere lithography and epitaxial lateral overgrowth (ELO) on a 4-in. sapphire substrate. The nanoscale ELO improved the crystal quality of overgrown epitaxial layers at a relatively low growth temperature of 1050 °C and at small coalescence thickness less than 2 μm. The light output power of the DUV LED was enhanced significantly by 67% at an injection current of 20 mA. We attribute such a remarkable enhancement to the formation of embedded periodic air voids which cause simultaneous improvements in the crystal quality of epitaxial layers by ELO and light extraction efficiency enabled by breaking the predominant in-plane guided propagation of DUV photons.

A method for generating stable ultrasonic levitation of physical matter in air using single beams (also known as tractor beams) is demonstrated. The method encodes the required phase modulation in passive unit cells into which the ultrasonic sources are mounted. These unit cells use waveguides such as straight and coiled tubes to act as delay-lines. It is shown that a static tractor beam can be generated using a single electrical driving signal, and a tractor beam with one-dimensional movement along the propagation direction can be created with two signals. Acoustic tractor beams capable of holding millimeter-sized polymer particles of density 1.25 g/cm3 and fruit-flies (Drosophila) are demonstrated. Based on these design concepts, we show that portable tractor beams can be constructed with simple components that are readily available and easily assembled, enabling applications in industrial contactless manipulation and biophysics.

This letter reports the implementation of double-drift-layer (DDL) design into GaN vertical Schottky barrier diodes (SBDs) grown on free-standing GaN substrates. This design balances the trade-off between desirable forward turn-on characteristics and high reverse breakdown capability, providing optimal overall device performances for power switching applications. With a well-controlled metalorganic chemical vapor deposition process, the doping concentration of the top drift layer was reduced, which served to suppress the peak electric field at the metal/GaN interface and increase the breakdown voltages of the SBDs. The bottom drift layer was moderately doped to achieve low on-resistance to reduce power losses. At forward bias, the devices exhibited a record low turn-on voltage of 0.59 V, an ultra-low on-resistance of 1.65 mΩ cm2, a near unity ideality factor of 1.04, a high on/off ratio of ∼1010, and a high electron mobility of 1045.2 cm2/(V s). Detailed comparisons with conventional single-drift-layer (SDL) GaN vertical SBDs indicated that DDL design did not degrade the forward…

A cladding-modulated 1D photonic crystal is realized for creating ultra-large dispersion on a silicon chip. Both normal dispersion and anomalous dispersion are realized on the same waveguide device. The design, fabrication, and characterization of the devices are demonstrated. The device exploits adjacent pillars' positioning to engineer the dispersion, as well as the variation of the distance between the pillar and waveguide to realize apodization. Devices achieving a group delay dispersion coefficient of −3.61 ps/nm and 3.28 ps/nm are demonstrated with a footprint of 1.27 × 1.7 mm2. The demonstrated devices possess a group delay dispersion coefficient × bandwidth product as large as 72 ps on a silicon, CMOS-compatible chip.

A perovskite solid-solution, (1-x)KNbO3-xBaNi1/2Nb1/2O3-δ (KBNNO), has been found to exhibit tunable bandgaps in the visible light energy range, making it suitable for light absorption and conversion applications, e.g., solar energy harvesting and light sensing. Such a common ABO3–type perovskite structure, most widely used for ferroelectrics and piezoelectrics, enables the same solid-solution material to be used for the simultaneous harvesting or sensing of solar, kinetic, and thermal energies. In this letter, the ferroelectric, pyroelectric, and piezoelectric properties of KBNNO with x = 0.1 have been reported above room temperature. The investigation has also identified the optimal bandgap for visible light absorption. The stoichiometric composition and also a composition with potassium deficiency have been investigated, where the latter has shown more balanced properties. As a result, a remanent polarization of 3.4 μC/cm2, a pyroelectric coefficient of 26 μC/m2 K, piezoelectric coefficients d33 ≈ 23 pC/N and g33 ≈ 4.1 × 10−3 Vm/N, and a direct bandgap of 1.48 eV have been…

As the size of gallium nitride (GaN) transistors is reduced in order to reach higher operating frequencies, heat dissipation becomes the critical bottleneck in device performance and longevity. Despite the importance of characterizing the physics governing the thermal transport in thin GaN films, the literature is far from conclusive. In this letter, we report measurements of thermal conductivity in a GaN film with thickness ranging from 15–1000 nm grown on 4H-SiC without a transition layer. Additionally, we measure the thermal conductivity in the GaN film when it is 1 μm-thick in the temperature range of 300 < T< 600 K and use a phonon transport model to explain the thermal conductivity in this film.

This study examines effects of the splitter plate placed in the near wake of a circular cylinder on the performance of a piezoelectric wind energy harvester through wind tunnel experiments. The kinetic energy of the harvester is gained by wind-induced vibrations of the circular cylinder. The splitter plate is attached to the leeward side of the cylinder. The ratio of the splitter plate length to the diameter of the circular cylinder (Lsp/D) ranges from 0.25 to 2.00. After attaching the splitter plate with an appropriate length, the harvester is able to sustain large amplitude vibrations beyond the wind speed range corresponding to vortex-induced vibrations. Thus, the upper bound of the wind speed range for the harvester to harness wind energy is eliminated, which significantly increases the efficiency of the harvester. Compared to the different lengths of the splitter plate, 0.65D has been found to be the optimal length for maximizing the harvested power.