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The article

High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

Jinho Bae, Hyoung Woo Kim, In Ho Kang, Gwangseok Yang, Jihyun Kim

Rank
68 of 2,351
Percentile
top 2.9%
Where
Applied Physics Letters, 2018
Citations
116

From the 2018 list, OpenAlex counts as of 2026-10-29.

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