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The article

Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate

A. Even, G. Laval, Olivier Ledoux, P. Ferret, David Sotta, E. Guiot and 3 more

Rank
67 of 2,890
Percentile
top 2.4%
Where
Applied Physics Letters, 2017
Citations
127

From the 2017 list, OpenAlex counts as of 2026-10-29.

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