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The article

Schottky barrier diode based on β -Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

Qiming He, Wenxiang Mu, Hang Dong, Shibing Long, Zhitai Jia, Hangbing Lv and 4 more

Rank
34 of 2,890
Percentile
top 1.2%
Where
Applied Physics Letters, 2017
Citations
178

From the 2017 list, OpenAlex counts as of 2026-10-29.

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