The 50 most-cited articles in Journal of Applied Physics, 2021

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical field, and the highest saturation velocity, thus representing an excellent material for the fabrication of high-speed/high-voltage components. The presence of spontaneous and piezoelectric polarization allows us to create a two-dimensional electron gas, with high mobility and large channel density, in the absence of any doping, thanks to the use of AlGaN/GaN heterostructures. This contributes to minimize resistive losses; at the same time, for GaN transistors, switching losses are very low, thanks to the small parasitic capacitances and switching charges. Device scaling and monolithic integration enable a high-frequency operation, with consequent advantages in terms of miniaturization. For high power/high-voltage operation, vertical device architectures are being proposed and investigated, and three-dimensional…

The use of Raman spectroscopy for carbon nanotube applications is presented here as a tutorial review. After introducing the relevant basic aspects of Raman spectroscopy of graphene-related materials, we will discuss how to use the Raman spectral features for practical purposes of controlling and characterizing nanotube properties relevant for applied materials and devices. Advanced techniques with potential to enhance the relevance of Raman spectroscopy application in the carbon nanotube field are also presented.

Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications.

There exists serious miscomprehension in the open literature about the electromagnetic interference shielding effectiveness (EMI SE) as a critical index to evaluate the shielding performance, which is misleading to the graduates and newcomers embarking on the field of electromagnetic shielding materials. EMI SE is defined as the sum of three terms including reflection loss, absorption loss, and multiple reflection loss in the classical Schelkunoff theory, while it is decomposed into two terms named reflection loss and absorption loss in practice, which is called Calculation theory here. In this paper, we elucidate the widely seen misconceptions connected with EMI SE via theoretical derivation and instance analysis. First, the terms in Calculation theory are often mistakenly regarded as the approximation of the terms with the same names in Schelkunoff theory when multiple reflection loss is negligible. Second, it is insufficient and unreasonable to determine the absorption-dominant shielding performance in the case that absorption loss is higher than reflection loss since reflection…

GaN technology is not only gaining traction in power and RF electronics but is also rapidly expanding into other application areas including digital and quantum computing electronics. This paper provides a glimpse of future GaN device technologies and advanced modeling approaches that can push the boundaries of these applications in terms of performance and reliability. While GaN power devices have recently been commercialized in the 15–900 V classes, new GaN devices are greatly desirable to explore both higher-voltage and ultra-low-voltage power applications. Moving into the RF domain, ultra-high frequency GaN devices are being used to implement digitized power amplifier circuits, and further advances using the hardware–software co-design approach can be expected. On the horizon is the GaN CMOS technology, a key missing piece to realize the full-GaN platform with integrated digital, power, and RF electronics technologies. Although currently a challenge, high-performance p-type GaN technology will be crucial to realize high-performance GaN CMOS circuits. Due to its excellent…

With the ability to transfer and process quantum information, large-scale quantum networks will enable a suite of fundamentally new applications, from quantum communications to distributed sensing, metrology, and computing. This Perspective reviews requirements for quantum network nodes and color centers in diamond as suitable node candidates. We give a brief overview of state-of-the-art quantum network experiments employing color centers in diamond and discuss future research directions, focusing, in particular, on the control and coherence of qubits that distribute and store entangled states, and on efficient spin–photon interfaces. We discuss a route toward large-scale integrated devices combining color centers in diamond with other photonic materials and give an outlook toward realistic future quantum network protocol implementations and applications.

Electro-optic modulators are an indispensable part of photonic communication systems, largely dictating the achievable transmission rate. Recent advances in materials and fabrication/processing techniques have brought new elements and a renewed dynamic to research on optical modulation. Motivated by the new opportunities, this Perspective reviews the state of the art in integrated electro-optic modulators, covering a broad range of contemporary materials and integrated platforms. To provide a better overview of the status of current modulators, an assessment of the different material platforms is conducted on the basis of common performance metrics: extinction ratio, insertion loss, electro-optic bandwidth, driving voltage, and footprint. The main physical phenomena exploited for electro-optic modulation are first introduced, aiming to provide a self-contained reference to researchers in physics and engineering. Additionally, we take care to highlight topics that can be overlooked and require attention, such as the accurate calculation of carrier density distribution and energy…

In order to realize a clean energy society by using renewable energies, high-performance solar cells are a very attractive proposition. The development of high-performance solar cells offers a promising pathway toward achieving high power per unit cost for many applications. As state-of-the-art of single-junction solar cells are approaching the Shockley–Queisser limit of 32%–33%, an important strategy to raise the efficiency of solar cells further is stacking solar cell materials with different bandgaps to absorb different colors of the solar spectrum. The III–V semiconductor materials provide a relatively convenient system for fabricating multi-junction solar cells providing semiconductor materials that effectively span the solar spectrum as demonstrated by world record efficiencies (39.2% under one-sun and 47.1% under concentration) for six-junction solar cells. This success has inspired attempts to achieve the same with other materials like perovskites for which lower manufacturing costs may be achieved. Recently, Si multi-junction solar cells such as III–V/Si, II–VI/Si,…

Phononic crystals (PnCs) control the transport of sound and heat similar to the control of electric currents by semiconductors and metals or light by photonic crystals. Basic and applied research on PnCs spans the entire phononic spectrum, from seismic waves and audible sound to gigahertz phononics for telecommunications and thermal transport in the terahertz range. Here, we review the progress and applications of PnCs across their spectrum, and we offer some perspectives in view of the growing demand for vibrational isolation, fast signal processing, and miniaturization of devices. Current research on macroscopic low-frequency PnCs offers complete solutions from design and optimization to construction and characterization, e.g., sound insulators, seismic shields, and ultrasonic imaging devices. Hypersonic PnCs made of novel low-dimensional nanomaterials can be used to develop smaller microelectromechanical systems and faster wireless networks. The operational frequency, compactness, and efficiency of wireless communications can also increase using principles of optomechanics. In…

Dielectric elastomer actuators (DEAs) are soft, electrically powered actuators that have no discrete moving parts, yet can exhibit large strains (10%–50%) and moderate stress (∼100 kPa). This Tutorial describes the physical basis underlying the operation of DEA's, starting with a simple linear analysis, followed by nonlinear Newtonian and energy approaches necessary to describe large strain characteristics of actuators. These lead to theoretical limits on actuation strains and useful non-dimensional parameters, such as the normalized electric breakdown field. The analyses guide the selection of elastomer materials and compliant electrodes for DEAs. As DEAs operate at high electric fields, this Tutorial describes some of the factors affecting the Weibull distribution of dielectric breakdown, geometrical effects, distinguishing between permanent and “soft” breakdown, as well as “self-clearing” and its relation to proof testing to increase device reliability. New evidence for molecular alignment under an electric field is also presented. In the discussion of compliant electrodes, the…

One of the intriguing properties characteristic to three-dimensional topological materials is the topological magnetoelectric phenomena arising from a topological term called the θ term. Such magnetoelectric phenomena are often termed the axion electrodynamics since the θ term has exactly the same form as the action describing the coupling between a hypothetical elementary particle, axion, and a photon. The axion was proposed about 40 years ago to solve the so-called strong CP problem in quantum chromodynamics and is now considered a candidate for dark matter. In this Tutorial, we overview theoretical and experimental studies on the axion electrodynamics in three-dimensional topological materials. Starting from the topological magnetoelectric effect in three-dimensional time-reversal invariant topological insulators, we describe the basic properties of static and dynamical axion insulators whose realizations require magnetic orderings. We also discuss the electromagnetic responses of Weyl semimetals with a focus on the chiral anomaly. We extend the concept of the axion…

This Perspective reviews the fundamental physics of space–charge interactions that are important in various media: vacuum gap, air gap, liquids, and solids including quantum materials. It outlines the critical and recent developments since a previous review paper on diode physics [Zhang et al. Appl. Phys. Rev. 4, 011304 (2017)] with particular emphasis on various theoretical aspects of the space–charge limited current (SCLC) model: physics at the nano-scale, time-dependent, and transient behaviors; higher-dimensional models; and transitions between electron emission mechanisms and material properties. While many studies focus on steady-state SCLC, the increasing importance of fast-rise time electric pulses, high frequency microwave and terahertz sources, and ultrafast lasers has motivated theoretical investigations in time-dependent SCLC. We particularly focus on recent studies in discrete particle effects, temporal phenomena, time-dependent photoemission to SCLC, and AC beam loading. Due to the reduction in the physical size and complicated geometries, we report recent studies in…

Carbon quantum dots (CQDs) are novel nanostructures that have great potential as fluorescent markers due to their multi-fluorescence, down and up converted emission, resistance to photobleaching, and biocompatibility. Here, we report the synthesis of fluorescent CQDs by the submerged arc discharge in water method. We discuss the method's simplicity, natural phases’ separation, and scalability. The produced CQDs size distribution was in the range of 1–5 nm. High-resolution transmission electron microscopy images and their fast Fourier transformation allowed the analysis of the CQDs’ internal structure. The absorption and fluorescence spectra of the as-produced CQDs were analyzed. The UV-Vis spectrum shows a single band with a maximum located at 356 nm. The photoluminescence emission presents two consistent bands with maxima located in the ranges of 320–340 nm (band A) and 400–410 nm (band B). To these emission bands correspond two bands in the excitation spectra located at 275 nm (band A) and 285 nm (band B). The fluorescence quantum yield was assessed as ∼16% using Rhodamine 6G as…

Photoluminescence (PL) spectroscopy is a powerful tool in studying semiconductor properties and identifying point defects. Gallium nitride (GaN) is a remarkable semiconductor material for its use in a new generation of bright white LEDs, blue lasers, and high-power electronics. In this Tutorial, we present details of PL experiments and discuss possible sources of mistakes. A brief analysis of near-band-edge emission includes basic characterization of GaN, essential findings about excitons in this material, and the explanation of less known details. We review modern approaches of quantitative analysis of PL from point defects in GaN. The updated classification of defects in undoped GaN and their latest identifications are presented. Typical mistakes in the interpretation of PL spectra from GaN are discussed, and myths about PL are refuted.

We demonstrate ferroelectricity in Mg-substituted ZnO thin films with the wurtzite structure. Zn1−xMgxO films are grown by dual-cathode reactive magnetron sputtering on (111)-Pt // (0001)-Al2O3 substrates at temperatures ranging from 26 to 200 °C for compositions spanning from x = 0 to x = 0.37. X-ray diffraction indicates a decrease in the c-lattice parameter and an increase in the a-lattice parameter with increasing Mg content, resulting in a nearly constant c/a axial ratio of 1.595 over this composition range. Transmission electron microscopy studies show abrupt interfaces between Zn1−xMgxO films and the Pt electrode. When prepared at pO2 = 0.025, film surfaces are populated by abnormally oriented grains as measured by atomic force microscopy for Mg concentrations >29%. Raising pO2 to 0.25 eliminates the misoriented grains. Optical measurements show increasing bandgap values with increasing Mg content. When prepared on a 200 °C substrate, films display ferroelectric switching with remanent polarizations exceeding 100 μC cm−2 and coercive fields below 3 MV cm−1 when the Mg content…

We present detailed investigations of the structural, elastic, dielectric, and piezoelectric properties of scandium aluminum nitride (ScxAl1−xN) with the wurtzite crystal structure by means of first-principles calculations based on density functional theory in order to enable a detailed comparison to the corresponding physical properties of GaAlN and InAlN. The goal of our approach is to use atomistic simulations to extract the novel solid state characteristics of ScxAl1−xN crystals by the determination of complete sets of coefficients for the elastic, compliance, and piezoelectric tensor and to confirm the theoretical predictions by experimental measurements of selected tensor coefficients. The calculation of the tensor components is accompanied by a detailed analysis of the crystal structures, e.g., average bond length, bond angles, lattice parameters, and mass density in dependence on alloy composition of ScxAl1−xN. If an increasing number of Al atoms of up to x = 0.5 are replaced by Sc atoms, we observe a nonlinear change of the ratio of lattice parameter c(x)a(x) and average…

Research into the use of nonlinear ultrasonic guided waves for nondestructive evaluation is expanding at a high rate because of the great potential benefit that they possess for early detection of material degradation. However, development of inspection and testing strategies is complicated because (i) the underlying physical principles are complex, (ii) there is a broad spectrum of possible solutions but only a limited number that have been shown to be effective, and (iii) the nonlinearity is weak and thus its measurement is challenging. This Tutorial aims to provide a foundation for researchers and technology-transitioners alike, to advance the application of nonlinear ultrasonic guided waves and ultimately transform how the service lives of structural systems are managed. The Tutorial focuses on the physical principles of nonlinear ultrasonic guided waves leading to the so-called internal resonance conditions that provide a means for selecting primary waves that generate cumulative secondary waves. To detect material degradation, we are primarily interested in nonlinearity…

Many advanced physical properties can be realized by using well-designed acoustic metamaterial (AM) structures, which have significant application value in engineering. In particular, thin-walled membrane, plate, and shell-type structures with deep subwavelength thicknesses that can meet light weight requirements have attracted the attention of many researchers and engineers from various specialized fields. This Tutorial systematically introduced the structural design methods, acoustic/elastic wave attenuation and regulation principles, and engineering applications of thin-walled AMs for low-frequency sound insulation, sound absorption, and vibration reduction. In particular, the design methods and sound insulation/absorption properties of thin-walled AMs for realizing narrow-band and broadband sound attenuation were explored. Furthermore, the local resonance bandgap characteristics, quantitative extraction method for the bending wave bandgap, vibration suppression properties, and the design method for local resonance vibration dampers for elastic wave regulation by thin-walled…

Avalanche multiplication characteristics in a reverse-biased homoepitaxial GaN p–n junction diode are experimentally investigated at 223–373 K by novel photomultiplication measurements utilizing above- and below-bandgap illumination. The device has a non-punch-through one-side abrupt p–-n+ junction structure, in which the depletion layer mainly extends to the p-type region. For above-bandgap illumination, the light is absorbed at the surface p+-layer, and the generated electrons diffuse and reach the depletion layer, resulting in an electron-injected photocurrent. On the other hand, for below-bandgap illumination, the light penetrates a GaN layer and is absorbed owing to the Franz–Keldysh effect in the high electric field region (near the p–n junction interface), resulting in a hole-induced photocurrent. The theoretical (non-multiplicated) photocurrents are calculated elaborately, and the electron- and hole-initiated multiplication factors are extracted as ratios of the experimental data to the calculated values. Through the mathematical analyses of the multiplication factors, the…

Gallium nitride (GaN) is one of the front-runner materials among the so-called wide bandgap semiconductors that can provide devices having high breakdown voltages and are capable of performing efficiently even at high temperatures. The wide bandgap, however, naturally leads to a high density of surface states on bare GaN-based devices or interface states along insulator/semiconductor interfaces distributed over a wide energy range. These electronic states can lead to instabilities and other problems when not appropriately managed. In this Tutorial, we intend to provide a pedagogical presentation of the models of electronic states, their effects on device performance, and the presently accepted approaches to minimize their effects such as surface passivation and insulated gate technologies. We also re-evaluate standard characterization methods and discuss their possible pitfalls and current limitations in probing electronic states located deep within the bandgap. We then introduce our own photo-assisted capacitance–voltage (C–V) technique, which is capable of identifying and…

Strong interactions between magnetic materials and electrodynamic cavities mix together spin and photon properties, producing unique hybridized behavior. The study of such coupled spin-photon systems, known as cavity magnonics, is motivated by the flexibility and controllability of these hybridized states for spintronic and quantum information technologies. In this Tutorial, we examine and compare both coherent and dissipative interactions in cavity magnonics. We begin with a familiar case study, the coupled harmonic oscillator, which provides insight into the unique characteristics of coherent and dissipative coupling. We then examine several canonical cavity-magnonic systems, highlighting the requirements for different coupling mechanisms, and conclude with recent applications of spin-photon hybridization, for example, the development of quantum transducers, memory architectures, isolators, and enhanced sensing.

Plasma-activated water (PAW) is gaining significant attention these days due to its potential use as a disinfectant, pesticide, food preservative, cancer cell treatment, fertilizer, etc. These applications of PAW depend on its reactivity (oxidizing-potential) and electrical conductivity (EC). In the present work, we have studied the effect of process parameters, viz., air flow rate, water stirrer speed, and the temperature of water during plasma–water interaction on the reactivity and EC of PAW using a three-way full factorial design of experiments. We have also attempted to optimize these process parameters. At optimum values of these parameters, we studied how the physicochemical properties of PAW vary by changing the volume of water and discharge power. Furthermore, we studied the physicochemical properties of the plasma-activated solution (PAS) and how the EC and pH of virgin solutions affect these properties. The obtained results of the present investigation showed that the flow rate of air, plasma treatment time with water, volume of water, and plasma discharge power play a…

Attaining control over the electrical conductivity of gallium nitride through impurity doping is one of the foremost achievements in semiconductor science. Yet, unwanted contaminants and point defects continue to limit device performance, and experimental techniques alone are insufficient for elucidating the behavior of these unintentionally incorporated species. Methodological advancements have made first-principles calculations more powerful than ever and capable of quantitative predictions, though care must still be taken in comparing results from theory and experiment. In this Tutorial, we explain the basic concepts that define the behavior of dopants, unintentional impurities, and point defects in GaN. We also describe how to interpret experimental results in the context of theoretical calculations and also discuss how the properties of defects and impurities vary in III-nitride alloys. Finally, we examine how the physics of defects and impurities in GaN is relevant for understanding other wide-bandgap semiconductor materials, such as the II–IV-nitrides, boron nitride, and the…

In this Tutorial, we introduce basic conceptual elements to understand and build a gate-based superconducting quantum computing system.

This work presents the first atomic scale evidence for ferroelectric polarization inversion on the unit cell level in a wurtzite-type material based on epitaxial Al0.75Sc0.25N thin films. The electric field induced formation of Al-polar inversion domains in the originally N-polar film is unambiguously determined by atomic resolution imaging using aberration-corrected scanning transmission electron microscopy (STEM). Anisotropic etching supports STEM results confirming a complete and homogenous polarization inversion at the film surface for the switched regions and the virtual absence of previous inversion domains in as-deposited regions. Local evidence of residual N-polar domains at the bottom electrode interface is observed and can be explained by both stress gradients and electric field deflection. The epitaxial relationship of the sapphire/AlN/Mo/AlScN multilayer stack is discussed in detail. Selected-area electron diffraction experiments and XRD pole figures reveal a Pitsch–Schrader type orientation relation between the Mo electrode and the AlScN film.

Plasmas interacting with liquids enable the generation of a highly reactive interfacial liquid layer due to a variety of processes driven by plasma-produced electrons, ions, photons, and radicals. These processes show promise to enable selective, efficient, and green chemical transformations and new material synthesis approaches. While many differences are to be expected between conventional electrolysis and plasma–liquid interactions, plasma–liquid interactions can be viewed, to a first approximation, as replacing a metal electrode in an electrolytic cell with a gas phase plasma. For this reason, we refer to this method as plasma-driven solution electrochemistry (PDSE). In this Perspective, we address two fundamental questions that should be answered to enable researchers to make transformational advances in PDSE: How far from equilibrium can plasma-induced solution processes be driven? and What are the fundamental differences between PDSE and other more traditional electrochemical processes? Different aspects of both questions are discussed in five sub-questions for which we…

The piezoelectric and spontaneous polarization of wurtzite ScxAl1−xN, GaxAl1−xN, and InxAl1−xN ternary compounds dramatically affects the electrical properties of pseudomorphic MexAl1−xN/GaN, MexAl1−xN/AlN, and MexAl1−xN/InN heterostructures and devices (Me: = Sc, Ga, In), due to bound interface charges caused by gradients in polarization at surfaces and heterointerfaces. We have calculated the piezoelectric and spontaneous polarization of undoped, metal polar ScxAl1−xN barrier layers (0 ≤ x ≤ 0.5) pseudomorphically grown on InN, GaN, and AlN buffer layers, in order to compare the polarization induced surface and interface charges determined to the ones predicted and measured in heterostructures with GaxAl1−xN and InxAl1−xN barriers (0 ≤ x ≤ 1.0). To facilitate the inclusion of the predicted polarization in future simulations, we give explicit prescriptions to calculate polarization induced bound interface charges for arbitrary x and barrier thicknesses up to 50 nm in each of the ternary III-N alloy heterostructures. In addition, we predict the electron sheet charges confined in…

Recent developments in reconfigurable photonic devices highly rely on the effective refractive index change enabled by phase change materials (PCMs) as either dielectric surroundings or constituting materials. This universal characteristic, tunable refractive index, is shared among various kinds of PCMs and has been successfully utilized to achieve multilevel modulations for both free-space and integrated photonics. In this Perspective, we briefly recapitulate the fundamental mechanisms of phase transitions for three dominant PCMs. The progress in integrating different PCMs with on-chip silicon photonics and periodic antenna arrays are reviewed and analyzed in parallel. We also discuss the existing problems of PCM photonics, for example, the compatibility with commercial production line, the stability issue, and accessibility of the stimuli. In the end, we provide the outlook for the improving material engineering of PCM and multi-functional PCM-based photonics devices.

Organic light-emitting diodes (OLEDs) with doublet-spin radical emitters have emerged as a new route to efficient display technologies. In contrast to standard organic semiconductors, radical materials have unpaired electrons. This feature results in the most well-known examples of organic radicals being where they are reactive species in chemical reactions. Stabilized radicals can be used in optoelectronic applications, which exploit their optical and spin properties, allowing up to 100% internal quantum efficiency (IQE) for electroluminescence. Highly efficient OLEDs have been demonstrated, which operate in the doublet-spin electronic state manifold with doublet emission. The radical-based devices present a departure from the singlet- and triplet-level considerations that impose efficiency limits in OLEDs for typical organic semiconductors (25% IQE). This Perspective focuses on radical doublet emitters for optoelectronics, outlining how the photo- and spin-physics of unpaired electron systems present new avenues for research in light-emitting applications.

Atomistic simulation methods, including anharmonic lattice dynamics combined with the Boltzmann transport equation, equilibrium and non-equilibrium molecular dynamics simulations, and Landauer formalism, are vital for the prediction of thermal conductivity and the understanding of nanoscale thermal transport mechanisms. However, for years, the simulation results using different methods, or even the same method with different simulation setups, lack consistency, leading to many arguments about the underlying physics and proper numerical treatments on these atomistic simulation methods. In this perspective, we review and discuss the recent advances in atomistic simulation methods to predict the thermal conductivity of solid materials. The underlying assumptions of these methods and their consequences on phonon transport properties are comprehensively examined. Using silicon and graphene as examples, we analyze the influence of higher-order phonon scatterings, finite-size effects, quantum effects, and numerical details on the thermal conductivity prediction and clarify how to fairly…

Hollow cathode plasma discharges are a fundamental part of a large variety of applications in industry, academia, and space. From surface processing and coatings deposition to plasma–surface interaction research and electric propulsion, advances in hollow cathode modeling and performance are critically important to the progress and evolution of these and other areas of technology. This paper describes perspectives on the progress that has been made in recent years in the capabilities and modeling of hollow cathodes used in plasma discharges. While many of the developments have been driven by the demanding requirements of electric propulsion applications, the information provided applies to all thermionic hollow cathodes and their applications. In the paper, we describe the status of 2D global simulations of hollow cathode plasmas, hollow cathode plume instabilities, and the development of higher current cathodes and low-current heaterless cathode technologies. Advances in our understanding and technology in these areas and some of the challenges that still need to be addressed and…

Solitonic magnetic excitations such as domain walls and, specifically, skyrmionics enable the possibility of compact, high density, ultrafast, all-electronic, low-energy devices, which is the basis for the emerging area of skyrmionics. The topological winding of skyrmion spins affects their overall lifetime, energetics, and dynamical behavior. In this Perspective, we discuss skyrmionics in the context of the present-day solid-state memory landscape and show how their size, stability, and mobility can be controlled by material engineering, as well as how they can be nucleated and detected. Ferrimagnets near their compensation points are promising candidates for this application, leading to a detailed exploration of amorphous CoGd as well as the study of emergent materials such as Mn4N and inverse Heusler alloys. Along with material properties, geometrical parameters such as film thickness, defect density, and notches can be used to tune skyrmion properties, such as their size and stability. Topology, however, can be a double-edged sword, especially for isolated metastable skyrmions,…

In this Perspective, we outline the recent progress, primary achievements, and further directions in the development of high refractive index nanostructures and metasurfaces. In particular, we review the role of multipole lattice effects in resonant properties of underlying nanostructures and nanophotonic elements in detail. Planar optical designs with efficient light control at the nanoscale can be engineered based on photonic lattices that operate in the translational regime between two and three dimensions. Such transdimensional lattices include 3D-engineered nanoantennas supporting multipole Mie resonances and arranged in the 2D arrays to harness collective effects in the nanostructure. Lattice effects in the periodic nanoparticle arrays have recently attracted a lot of attention as they enable not only spectrally narrow resonant features but also resonance position tuning over a broad range. The recent results indicate that different nanoparticle multipoles not only produce resonant spectral features but are also involved in the cross-multipole coupling, and these effects need…

Optical wireless power transmission (OWPT) can be used for applications that cannot access traditional power using metal wires. Photovoltaic power-converting III-V semiconductor devices are the core components required for achieving such remote and galvanically isolated power deployments. The development of high-efficiency power converters has already propelled several sensors and probe applications. This growing applied physics field is leveraging the use of ubiquitous laser diode products, now commonly available at various wavelengths. Novel multijunction designs, based on the vertical epitaxial heterostructure architecture devices, have recently allowed fiber-based and free-space applications to quickly progress to higher electrical powers and to benefit from other laser wavelengths. Here, we discuss the perspectives of such multijunction power converters from the viewpoint of realizing additional OWPT deployments and for enabling more probe, sensor, or electronic subsystem power capabilities. The Perspective hence provides a roadmap for devices achieving not only higher…

Small-angle neutron scattering (SANS) is a powerful technique that has been widely used to study polymer materials. In particular, it can provide information on the size, shape, and structure of polymers as well as associated thermodynamic quantities. However, to properly design SANS experiments and correctly interpret the results, it is necessary to understand the unique advantages inherent to neutron scattering measurements of soft materials and the underlying principles of the technique. In addition, it may be necessary to construct new scattering models. In this Tutorial, we provide an overview of SANS and a guide to interpreting SANS measurements of polymers that is aimed at new and prospective users—focusing on standard plots, models, and simple methods by which new models can be quickly constructed.

In the present study, the structural and hitherto uninvestigated mechanical (elastic stiffness constants, machinability index, Cauchy pressure, anisotropy indices, brittleness/ductility, Poisson's ratio), electronic, optical, and thermodynamic properties of novel boron-rich compounds B6X (X = S, Se) have been explored using density functional theory. The estimated structural lattice parameters were consistent with the prior report. The mechanical and dynamical stability of these compounds have been established theoretically. The materials are brittle in nature and elastically anisotropic. The value of fracture toughness, KIC for the B6S and B6Se, are ∼ 2.07 MPam0.5, evaluating the resistance to limit the crack propagation inside the materials. Both B6S and B6Se compounds possess high hardness values in the range of 31–35 GPa and have the potential to be prominent members of the class of hard compounds. Strong covalent bonding and sharp peak at low energy below the Fermi level confirmed by partial density of states (PDOS) resulted in the high hardness. The profile of band structure…

Significant progress has been made in answering fundamental questions about how and, more importantly, on what time scales interactions between electrons, spins, and phonons occur in solid state materials. These complex interactions are leading to the first real applications of terahertz (THz) spintronics: THz emitters that can compete with traditional THz sources and provide additional functionalities enabled by the spin degree of freedom. This Tutorial article is intended to provide the background necessary to understand, use, and improve THz spintronic emitters. A particular focus is the introduction of the physical effects that underlie the operation of spintronic THz emitters. These effects were, for the most part, first discovered through traditional spin-transport and spintronic studies. We, therefore, begin with a review of the historical background and current theoretical understanding of ultrafast spin physics that has been developed over the past 25 years. We then discuss standard experimental techniques for the characterization of spintronic THz emitters and—more…

Rare earth (RE) ions activated inorganic phosphors with multi-color emissions have received considerable attention because of their emerging applications in solid-state lighting, backlight displays, lasers, biomedical imaging, and so on. This tutorial review concerns the design principles for Eu2+ and Eu3+ activated red-emitting inorganic solids and highlights the influencing factors on the luminescence performance. Based on the recent advances in structural design of inorganic RE phosphors, we proposed several design principles for achieving red emission in Eu2+/Eu3+ ions doped solid-state materials. On the one hand, for the realization of red emission from Eu2+ ion, the used strategies include the following: (1) designed synthesis of new Eu2+-doped nitride or sulfide phosphors, (2) anionic substitution achieves large centroid shift, (3) Eu2+ occupies polyhedrons with small coordination numbers to obtain large ɛcfs, (4) doping concentration controls the distribution of Eu2+ ions, (5) mixed ligands induce large ΔS, and (6) doping Eu2+ in nitrides with UCr4C4-type structure to…

In this paper, a broadband metamaterial absorber with a fractional bandwidth of 126.88% was presented. The characteristic mode theory was used to guide the design of the absorber. According to the analysis of characteristic mode and characteristic current, the resistance value of resistive films can be determined. The different modal information obtained through parameter changes can also better guide the design of the absorber. To study its operation mechanism, the equivalent impedance and surface current distribution of the proposed absorber have been analyzed. The final simulation and measurement results show that the proposed absorber has a wide absorbing bandwidth which is from 3.21 to 14.35 GHz, and the absorptivity is greater than 90%, covering the S, C, X, and Ku bands. In addition, for TE and TM polarization, it can achieve an absorptivity of more than 85% at 45° oblique incident and has good angular stability. Hence, the absorber has great potential applications in the field of electromagnetic stealth technology and Radar Cross Section reduction.

Surface-enhanced Raman scattering (SERS) technique has shown extraordinary features for biomedical applications. The implementation of SERS nanotags has opened a new era for bioimaging and detections. As a powerful tool, SERS nanotags provide favorable properties such as fingerprint spectrum, narrow peak linewidth, good photostability, and high spatial resolution accompanied by various rational designs of nanoparticles. They have proven as useful imaging agents for in vivo, ex vivo, and in vitro detection of cancerous cells and tissues. This tutorial provides the basic principles of SERS and SERS nanotags, including recent progress of SERS-based bioimaging applications, as well as the outlooks into the future developments toward practical clinical SERS.

The power conversion efficiency of thin film solar cells using organic–inorganic hybrid lead halide perovskite as an absorber has achieved over 25%. An augment of the output voltage can further increase the efficiency approaching the Shockley–Queisser efficiency limitation, which is highly correlated with charge carrier management at interfaces in perovskite devices. This perspective presents some considerations to improve carrier transfer and reduce recombination loss for highly efficient perovskite solar cells, including primary requests on charge carrier transfer dynamics, reasonable design methodologies of interfacial materials, and tuning interface interaction between perovskite and charge transport layers.

While the technology of microwave and infrared sources is quite mature and has been widely used in our daily life for decades, sources that can work well across the terahertz (THz) range are still lagging behind, which is often referred to as the “THz gap.” As one of the most pioneering THz setups, terahertz time-domain spectroscopy has been a vital tool to explore the properties of materials as well as their underlying physics. The mechanism is to use an ultrafast infrared pump pulse for exciting rapidly decaying currents inside either a nonlinear or a photoconducting medium, known as a THz emitter, which produces free-space coherent THz radiation. Most recently, a novel THz emitter emerges and rises, which is based on the spin-related effects in magnetic/nonmagnetic nanofilms and can cover the full range of the THz band, named as spintronic THz emitter (STE). This perspective aims to elucidate the unique features and advantages of STE as well as its capability and potential to develop novel applications. We summarize the multidisciplinary efforts that have been made to improve the…

Based on the current knowledge, a plasma–liquid interface looks and behaves very differently from its counterpart at a solid surface. Local processes characteristic to most liquids include a stronger evaporation, surface deformations, droplet ejection, possibly distinct mechanisms behind secondary electron emission, the formation of an electric double layer, and an ion drift-mediated liquid resistivity. All of them can strongly influence the interfacial charge distribution. Accordingly, the plasma sheath at a liquid surface is most likely unique in its own way, both with respect to its structure and behavior. However, insights into these properties are still rather scarce or uncertain, and more studies are required to further disclose them. In this Perspective, we argue why more research on the plasma sheath is not only recommended but also crucial to an accurate understanding of the plasma–liquid interaction. First, we analyze how the sheath regulates various elementary processes at the plasma–liquid interface, in terms of the electrical coupling, the bidirectional mass transport,…

Smart textiles are adaptive materials that use established textile methods to integrate multifunctionalities beyond apparels. Despite recent advancement, a significant gap exists between commercial needs and the academic state of the art. In this perspective, we aim to address the gap by (i) holistically investigating smart textile system operation, (ii) exploring production methods and materials for stimuli-responsive smart textiles, (iii) discussing key emerging application areas for stimuli-responsive textiles, and (iv) identifying markets, production techniques, and strategies for future development. Stimuli-responsive smart textiles rely on materials and processes to interact with the environment and wearer. Smart textile applications, such as assistive soft robotics, smart healing, and thermal comfort regulation, require textiles to meet the needs of form and function. Smart textile commercialization requires the identification of markets ready for adaptive textiles, wherein a smart phone or patch does not address the consumer needs. Interdisciplinary collaborations can focus…

Plasmonic materials and phenomena have been widely studied and applied in multiple fields for a long time. One of the most promising applications is in the engineering of biosensor devices, offering label-free and real-time analysis of biomolecular interactions with excellent performances. In this tutorial, we provide a pedagogical review of the working principles of plasmonic biosensors, main fabrication methods, instrumentation, and general guidelines for their development. Special focus is placed on the biosensor performance characterization and assessment, as well as on the sensor surface biofunctionalization. In the end, we discuss the common procedure to develop and validate biosensors for relevant biomedical and environmental purposes and future perspectives in terms of boosting capabilities and sensor integration in point-of-care platforms.

Waves are generally characterized by angular frequency ω and wavevector k. Accordingly, this tutorial is structured into two parts, one on resonance-based acoustic metamaterials, in the frequency domain, and one on topological acoustics, based on the wavevector domain as topological structures inherently involve spatial configurations that are a step beyond the simple periodic lattices. Each part will begin with a brief introduction of the basic principles, followed by two examples described in detail. In the first part, we present decorated membrane resonators and the broadband optimal acoustic absorption structures, the latter being crucial for the potential applications of acoustic metamaterials. In the second part, we discuss how to construct the Dirac cone, a special type of dispersion from either accidental degeneracy or symmetry protection, which can be shown to lead to negative, zero, or positive refractive indices. The shifting and gapping of these Dirac cones in the reciprocal space can result in effects on acoustic waves similar to that of a magnetic field on an electron.…

Breaking acoustic reciprocity is essential to create robust one-way propagation where sound waves or elastic vibrations are permitted to travel in only one direction. This unidirectional response forms the basis for devices such as acoustic isolators and circulators, and it also unlocks new functionalities for complex systems such as acoustic topological insulators. After reviewing the principles of acoustic reciprocity, we look at techniques to achieve large reciprocity breaking, including nonlinearities, moving media, spatiotemporal modulation, and nonlinear bianisotropy. We then discuss the recent surge of progress in nonreciprocal surface acoustic wave devices and topological acoustic systems, areas which we predict will continue to flourish in the coming years. We anticipate that these and other applications of nonreciprocity will continue to enhance acoustic technology and form the basis for new acoustic devices. Reciprocity is a fundamental principle in wave manipulation, and techniques for breaking its symmetry will continue to be discovered, refined, optimized, and applied…

The aim of this study is to obtain a systematic insight into the scandium (Sc) concentration dependence of the spontaneous polarization (Psp) in ScxAl1−xN by using first-principles calculations. From the calculated results, we observe that a structural change from a c-axis polarized wurtzite structure to a nonpolarized layered hexagonal structure takes place at x = 0.67, and the spontaneous polarization decreases nonlinearly with a change in the Sc concentration. Furthermore, we calculate the spontaneous polarizations from each cation individually and find that the spontaneous polarization from aluminum–nitrogen (Al–N) (PspAlN) is higher than that from scandium–nitrogen (Sc–N) (PspScN). This difference in spontaneous polarization arising from the cationic origin is attributed to the difference in the internal parameter along the c axis (Δu3k) based on the layered hexagonal structure.

Aluminum nitride is piezoelectric and exhibits spontaneous polarization along the c axis, but the polarization cannot be switched by applying an electric field. Adding Sc to AlN enhances the piezoelectric properties and can make the alloy ferroelectric. We perform a detailed first-principles analysis of spontaneous and piezoelectric polarization. Comparisons between explicit supercell calculations show that the virtual crystal approximation produces accurate results for polarization but falls short in describing the phase stability of the alloy. We relate the behavior of the piezoelectric constant e33 to the microscopic behavior of the internal displacement parameter u, finding that the internal-strain contribution dominates in the Sc-induced enhancement. The value of u increases with scandium concentration, bringing the alloy locally closer to a layered hexagonal structure. Our approach allows us to calculate the ferroelectric switching barrier, which we analyze as a function of Sc concentration and temperature based on the Ginzburg–Landau theory.