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The article
N‐polar deep‐recess GaN MISHEMT with enhanced f t ·L G by gate dielectric thinning
Henry Collins, Emre Akso, Christopher J. Clymore, Kamruzzaman Khan, Robert Hamwey, Nirupam Hatui and 3 more
- Rank
- 36 of 359
- Percentile
- top 10.1%
- Where
- Electronics Letters, 2024
- Citations
- 6
From the 2024 list, OpenAlex counts as of 2026-10-29.
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