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The article

Demonstration of fully vertical GaN‐on‐Si Schottky diode

K. Zhang, Suguru Mase, K. Nakamura, Takeaki Hamada, Takashi Egawa

Rank
31 of 876
Percentile
top 3.6%
Where
Electronics Letters, 2017
Citations
38

From the 2017 list, OpenAlex counts as of 2026-10-29.

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