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The article
Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications
H. Takahashi, Yuji Ando, Yoichi Tsuchiya, Akio Wakejima, Hiroaki Hayashi, Eiji Yagyu and 4 more
- Rank
- 34 of 383
- Percentile
- top 8.9%
- Where
- Electronics Letters, 2021
- Citations
- 11
From the 2021 list, OpenAlex counts as of 2026-10-29.
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