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The article
RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i ‐line stepper lithography
Yuji Ando, H. Takahashi, Ryutaro Makisako, Akio Wakejima, Jun Suda
- Rank
- 41 of 355
- Percentile
- top 11.6%
- Where
- Electronics Letters, 2023
- Citations
- 7
From the 2023 list, OpenAlex counts as of 2026-10-29.
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