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The article
High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers
Junji Kotani, Kozo Makiyama, Toshihiro Ohki, Shiro Ozaki, Naoya Okamoto, Yuichi Minoura and 3 more
- Rank
- 28 of 355
- Percentile
- top 7.9%
- Where
- Electronics Letters, 2023
- Citations
- 9
From the 2023 list, OpenAlex counts as of 2026-10-29.
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