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The article
Analysis of conduction mechanism of hole leakage current in thermally grown oxide on p-channel 4H-SiC MOSFETs
Hiroki Nemoto, Dai Okamoto, Xufang Zhang, Mitsuru Sometani, Mitsuo Okamoto, Tetsuo Hatakeyama and 3 more
- Rank
- 87 of 5,611
- Percentile
- top 1.6%
- Where
- The Japan Society of Applied Physics, 2019
- Citations
- 0
From the 2019 list, OpenAlex counts as of 2026-10-29.
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