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The article
Tuning Schottky Barrier and Contact Type of Metal–Semiconductor in Ti 3 C 2 T 2 /MoS 2 (T = F, O, OH) by Strain: A First-Principles Study
Yan Liu, Qiang Zhang, Wendong Zhang, Riguang Zhang, Baojun Wang, Chao Ji and 2 more
- Rank
- 93 of 2,834
- Percentile
- top 3.3%
- Where
- The Journal of Physical Chemistry C, 2021
- Citations
- 61
From the 2021 list, OpenAlex counts as of 2026-10-29.
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