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The article

Diamond field-effect transistors for RF power electronics: Novel NO 2 hole doping and low-temperature deposited Al 2 O 3 passivation

Makoto Kasu

Rank
39 of 1,533
Percentile
top 2.6%
Where
Japanese Journal of Applied Physics, 2016
Citations
47

From the 2016 list, OpenAlex counts as of 2026-10-29.

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