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The article
Conduction mechanism in highly doped β-Ga 2 O 3 single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes
Toshiyuki Oishi, 和也 原田, Yuta Koga, Makoto Kasu
- Rank
- 18 of 1,533
- Percentile
- top 1.2%
- Where
- Japanese Journal of Applied Physics, 2016
- Citations
- 83
From the 2016 list, OpenAlex counts as of 2026-10-29.
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