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The article

AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

Masaaki Kuzuhara, Joel Tacla Asubar, Hirokuni Tokuda

Rank
6 of 1,533
Percentile
top 0.4%
Where
Japanese Journal of Applied Physics, 2016
Citations
130

From the 2016 list, OpenAlex counts as of 2026-10-29.

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