Your Top 10 most-cited badge
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The article
Electron channel mobility in silicon-doped Ga 2 O 3 MOSFETs with a resistive buffer layer
Man Hoi Wong, Kohei Sasaki, Akito Kuramata, Shigenobu S. Yamakoshi, Masataka Higashiwaki
- Rank
- 5 of 1,533
- Percentile
- top 0.4%
- Where
- Japanese Journal of Applied Physics, 2016
- Citations
- 130
From the 2016 list, OpenAlex counts as of 2026-10-29.
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