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The article

Preparation of 2-in.-diameter (001) β-Ga 2 O 3 homoepitaxial wafers by halide vapor phase epitaxy

Quang Tu Thieu, Daiki Wakimoto, Yuki Koishikawa, Kohei Sasaki, Ken Goto, Keita Konishi and 4 more

Rank
49 of 1,269
Percentile
top 3.9%
Where
Japanese Journal of Applied Physics, 2017
Citations
39

From the 2017 list, OpenAlex counts as of 2026-10-29.

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