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The article
Evaluation of Schottky barrier height on 4H-SiC m -face for Schottky barrier diode wall integrated trench MOSFET
Yusuke Kobayashi, Hiroshi Ishimori, Akimasa Kinoshita, Takahito Kojima, Manabu Takei, Hiroshi Kimura and 1 more
- Rank
- 44 of 1,269
- Percentile
- top 3.5%
- Where
- Japanese Journal of Applied Physics, 2017
- Citations
- 44
From the 2017 list, OpenAlex counts as of 2026-10-29.
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