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The article

Band alignment of atomic layer deposited SiO 2 and HfSiO 4 with β-Ga 2 O 3

Patrick H. Carey, Fan Ren, David C. Hays, Brent P. Gila, S. J. Pearton, Soohwan Jang and 1 more

Rank
41 of 1,269
Percentile
top 3.3%
Where
Japanese Journal of Applied Physics, 2017
Citations
46

From the 2017 list, OpenAlex counts as of 2026-10-29.

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