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The article
Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors
Kenya Nishiguchi, Syota Kaneki, Shiro Ozaki, Tamotsu Hashizume
- Rank
- 24 of 1,269
- Percentile
- top 1.9%
- Where
- Japanese Journal of Applied Physics, 2017
- Citations
- 63
From the 2017 list, OpenAlex counts as of 2026-10-29.
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