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The article
Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga 2 O 3 substrates with crystal defects
Takayoshi Oshima, Akihiro Hashiguchi, Tomoya Moribayashi, Kimiyoshi Koshi, Kohei Sasaki, Akito Kuramata and 3 more
- Rank
- 6 of 1,269
- Percentile
- top 0.5%
- Where
- Japanese Journal of Applied Physics, 2017
- Citations
- 97
From the 2017 list, OpenAlex counts as of 2026-10-29.
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