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The article

Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes

Shohei Hayashi, Tamotsu Yamashita, Junji Senzaki, Masaki Miyazato, Mina Ryo, Masaaki Miyajima and 4 more

Rank
42 of 1,406
Percentile
top 3%
Where
Japanese Journal of Applied Physics, 2018
Citations
43

From the 2018 list, OpenAlex counts as of 2026-10-29.

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