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The article

5.0 kV breakdown-voltage vertical GaN p–n junction diodes

Hiroshi Ohta, Kentaro Hayashi, Fumimasa Horikiri, Michitaka Yoshino, Tohru Nakamura, Tomoyoshi Mishima

Rank
5 of 1,406
Percentile
top 0.4%
Where
Japanese Journal of Applied Physics, 2018
Citations
124

From the 2018 list, OpenAlex counts as of 2026-10-29.

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