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The article
4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability
Hiroshi Ohta, Naomi Asai, Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Tomoyoshi Mishima
- Rank
- 21 of 1,558
- Percentile
- top 1.4%
- Where
- Japanese Journal of Applied Physics, 2019
- Citations
- 59
From the 2019 list, OpenAlex counts as of 2026-10-29.
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