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The article
Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs
Yuichi Minoura, Toshihiro Ohki, Naoya Okamoto, Atsushi Yamada, Kozo Makiyama, Junji Kotani and 3 more
- Rank
- 18 of 1,558
- Percentile
- top 1.2%
- Where
- Japanese Journal of Applied Physics, 2019
- Citations
- 60
From the 2019 list, OpenAlex counts as of 2026-10-29.
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