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The article

Demonstration of 1200 V/1.4 mΩ cm 2 vertical GaN planar MOSFET fabricated by an all ion implantation process

Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Hideaki Matsuyama, Masaharu Edo

Rank
3 of 1,558
Percentile
top 0.2%
Where
Japanese Journal of Applied Physics, 2019
Citations
119

From the 2019 list, OpenAlex counts as of 2026-10-29.

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