Your Top 50 most-cited badge
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The article
Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs
Hajime Tanaka, Nobuya Mori
- Rank
- 20 of 977
- Percentile
- top 2.1%
- Where
- Japanese Journal of Applied Physics, 2020
- Citations
- 38
From the 2020 list, OpenAlex counts as of 2026-10-29.
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