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The article
A simulation study on memory characteristics of InGaZnO-channel ferroelectric FETs with 2D planar and 3D structures
Fei Mo, Xiaoran Mei, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
- Rank
- 37 of 876
- Percentile
- top 4.3%
- Where
- Japanese Journal of Applied Physics, 2021
- Citations
- 24
From the 2021 list, OpenAlex counts as of 2026-10-29.
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