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The article
The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles
Ryota Wada, Tsutomu Nagayama, Nobuhiro Tokoro, Takashi Kuroi, Hrishikesh Das, Swapna G. Sunkari and 1 more
- Rank
- 36 of 876
- Percentile
- top 4.2%
- Where
- Japanese Journal of Applied Physics, 2021
- Citations
- 24
From the 2021 list, OpenAlex counts as of 2026-10-29.
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