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The article

SiO 2 /GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition

Keito Aoshima, Noriyuki Taoka, Masahiro Horita, Jun Suda

Rank
29 of 885
Percentile
top 3.3%
Where
Japanese Journal of Applied Physics, 2022
Citations
23

From the 2022 list, OpenAlex counts as of 2026-10-29.

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