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The article
Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga2O3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes
Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Makoto Kasu
- Rank
- 15 of 842
- Percentile
- top 1.8%
- Where
- Japanese Journal of Applied Physics, 2023
- Citations
- 26
From the 2023 list, OpenAlex counts as of 2026-10-29.
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