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The article
Enhancement-mode Ga 2 O 3 FETs with an unintentionally doped (001) β -Ga 2 O 3 channel layer grown by metal-organic chemical vapor deposition
Botong Li, Tiwei Chen, Li Zhang, Xiaodong Zhang, Chunhong Zeng, Yu Hu and 7 more
- Rank
- 40 of 758
- Percentile
- top 5.3%
- Where
- Japanese Journal of Applied Physics, 2024
- Citations
- 9
From the 2024 list, OpenAlex counts as of 2026-10-29.
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