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The article
High-temperature operation of Al2O3/Ga2O3 bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage
Mritunjay Kumar, Vishal Khandelwal, Saravanan Yuvaraja, Dhanu Chettri, Haicheng Cao, Ganesh Mainali and 2 more
- Rank
- 38 of 758
- Percentile
- top 5.1%
- Where
- Japanese Journal of Applied Physics, 2024
- Citations
- 9
From the 2024 list, OpenAlex counts as of 2026-10-29.
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