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The article
AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on single-crystal AlN substrate by metalorganic chemical vapor deposition
Yoshinobu Kometani, Tomoyuki Kawaide, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
- Rank
- 37 of 758
- Percentile
- top 4.9%
- Where
- Japanese Journal of Applied Physics, 2024
- Citations
- 9
From the 2024 list, OpenAlex counts as of 2026-10-29.
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