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The article

High aspect ratio SiO2/SiN (ON) stacked layer etching using C3HF5, C4H2F6, and C4H4F6

C. Abe, Toshiyuki Sasaki, Y. Kondo, S. Yoshinaga, Shuichi Kuboi, Yutaka Takahashi and 4 more

Rank
10 of 758
Percentile
top 1.4%
Where
Japanese Journal of Applied Physics, 2024
Citations
14

From the 2024 list, OpenAlex counts as of 2026-10-29.

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