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The article
Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n ––Ga2O3 drift layers grown by halide vapor phase epitaxy
Masataka Higashiwaki, Keita Konishi, Kohei Sasaki, Ken Goto, Kazushiro Nomura, Quang Tu Thieu and 7 more
- Rank
- 6 of 3,118
- Percentile
- top 0.2%
- Where
- Applied Physics Letters, 2016
- Citations
- 348
From the 2016 list, OpenAlex counts as of 2026-10-29.
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