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The article
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β -Ga2O3 substrate with high breakdown voltage
Kelson D. Chabak, Neil Moser, Andrew J. Green, Dennis E. Walker, Stephen E. Tetlak, Eric R. Heller and 9 more
- Rank
- 5 of 3,118
- Percentile
- top 0.2%
- Where
- Applied Physics Letters, 2016
- Citations
- 373
From the 2016 list, OpenAlex counts as of 2026-10-29.
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