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The article

Electron and hole mobility of rutile GeO2 from first principles: An ultrawide-bandgap semiconductor for power electronics

K. Bushick, K. A. Mengle, S. Chae, E. Kioupakis

Rank
81 of 2,129
Percentile
top 3.9%
Where
Applied Physics Letters, 2020
Citations
77

From the 2020 list, OpenAlex counts as of 2026-10-29.

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