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The article
633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress
Daisuke Iida, Zhe Zhuang, Pavel Kirilenko, Martin Velazquez‐Rizo, Mohammed A. Najmi, Kazuhiro Ohkawa
- Rank
- 12 of 2,129
- Percentile
- top 0.6%
- Where
- Applied Physics Letters, 2020
- Citations
- 153
From the 2020 list, OpenAlex counts as of 2026-10-29.
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