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The article
Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β -Ga2O3 Schottky barrier diodes
Sayleap Sdoeung, Kohei Sasaki, Satoshi Masuya, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata and 1 more
- Rank
- 71 of 2,384
- Percentile
- top 3%
- Where
- Applied Physics Letters, 2021
- Citations
- 72
From the 2021 list, OpenAlex counts as of 2026-10-29.
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