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The article

Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage

Maciej Matys, Kazuki Kitagawa, Tetsuo Narita, Tsutomu Uesugi, Jun Suda, Tetsu Kachi

Rank
99 of 2,106
Percentile
top 4.8%
Where
Applied Physics Letters, 2022
Citations
40

From the 2022 list, OpenAlex counts as of 2026-10-29.

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