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The article

β -Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination

Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan, Chandan Joishi, Siddharth Rajan

Rank
15 of 2,106
Percentile
top 0.8%
Where
Applied Physics Letters, 2022
Citations
72

From the 2022 list, OpenAlex counts as of 2026-10-29.

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