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The article
N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
Eungkyun Kim, Zexuan Zhang, Jimy Encomendero, Jashan Singhal, Kazuki Nomoto, Austin Lee Hickman and 5 more
- Rank
- 66 of 2,414
- Percentile
- top 2.8%
- Where
- Applied Physics Letters, 2023
- Citations
- 43
From the 2023 list, OpenAlex counts as of 2026-10-29.
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