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The article
Oxygen vacancy engineering in Si-doped, HfO2 ferroelectric capacitors using Ti oxygen scavenging layers
Nicholas T. Barrett, Wassim Hamouda, C. Lubin, J. Laguerre, Catherine Carabasse, Nicolas Vaxelaire and 3 more
- Rank
- 94 of 2,718
- Percentile
- top 3.5%
- Where
- Applied Physics Letters, 2024
- Citations
- 25
From the 2024 list, OpenAlex counts as of 2026-10-29.
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