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The article
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
Felix Kaess, Seiji Mita, Jingqiao Xie, Pramod Reddy, Andrew Klump, Luis H. Hernandez-Balderrama and 6 more
- Rank
- 64 of 2,368
- Percentile
- top 2.8%
- Where
- Journal of Applied Physics, 2016
- Citations
- 82
From the 2016 list, OpenAlex counts as of 2026-10-29.
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