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The article

Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

Esmat Farzana, Elaheh Ahmadi, James S. Speck, Aaron R. Arehart, Steven A. Ringel

Rank
23 of 2,105
Percentile
top 1.1%
Where
Journal of Applied Physics, 2018
Citations
126

From the 2018 list, OpenAlex counts as of 2026-10-29.

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