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The article

Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

Tetsu Kachi, Tetsuo Narita, Hideki Sakurai, Maciej Matys, Keita Kataoka, Kazufumi Hirukawa and 6 more

Rank
35 of 1,821
Percentile
top 2%
Where
Journal of Applied Physics, 2022
Citations
56

From the 2022 list, OpenAlex counts as of 2026-10-29.

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